파트넘버.co.kr RHRG5040 데이터시트 PDF


RHRG5040 반도체 회로 부품 판매점

(RHRG5040 - RHRG5060) Hyperfast Diodes



Harris Semiconductor 로고
Harris Semiconductor
RHRG5040 데이터시트, 핀배열, 회로
RHRG5040, RHRG5050,
SEMICONDUCTOR
RHRG5060
April 1995
50A, 400V - 600V Hyperfast Diodes
Features
Package
• Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <45ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . +175oC
• Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated
• Planar Construction
CATHODE
(BOTTOM
SIDE METAL)
Applications
• Switching Power Supplies
www.DataSPhoeewt4eUr.Scowmitching Circuits
• General Purpose
Description
Symbol
RHRG5040, RHRG5050 and RHRG5060 (TA49065) are
hyperfast diodes with soft recovery characteristics (tRR
<45ns). They have half the recovery time of ultrafast diodes
and are silicon nitride passivated ion-implanted epitaxial
planar construction.
These devices are intended for use as freewheeling/
clamping diodes and rectifiers in a variety of switching power
supplies and other power switching applications. Their low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
RHRG5040
TO-247
RHRG5040
RHRG5050
TO-247
RHRG5050
RHRG5060
TO-247
RHRG5060
NOTE: When ordering, use the entire part number.
JEDEC STYLE TO-247
ANODE
CATHODE
K
A
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . .VRRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . VRWM
DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR
Average Rectified Forward Current . . . . . . . . . . . . . . . . IF(AV)
(TC = +93oC)
Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . .IFSM
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . .IFSM
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . PD
Avalanche Energy (L = 40mH) . . . . . . . . . . . . . . . . . . . . EAVL
Operating and Storage Temperature . . . . . . . . . . . . TSTG, TJ
RHRG5040
400
400
400
50
100
500
150
40
-65 to +175
Copyright © Harris Corporation 1995
7-32
RHRG5050
500
500
500
50
100
500
150
40
-65 to +175
RHRG5060
600
600
600
50
UNITS
V
V
V
A
100 A
500 A
150
40
-65 to +175
W
mj
oC
File Number 3920.1


RHRG5040 데이터시트, 핀배열, 회로
Specifications RHRG5040, RHRG5050, RHRG5060
Electrical Specifications TC = +25oC, Unless Otherwise Specified
SYMBOL
TEST
CONDITION
RHRG5040
MIN TYP MAX
RHRG5050
MIN TYP MAX
RHRG5060
MIN TYP MAX
UNITS
VF IF = 50A, TC = +25oC
-
- 2.1 -
- 2.1 -
- 2.1
V
IF = 50A, TC = +150oC
-
- 1.7 -
- 1.7 -
- 1.7
V
IR VR = 400V, TC = +25oC
- - 500 - - - - - - µA
VR = 500V, TC = +25oC
- - - - - 500 - - - µA
VR = 600V, TC = +25oC
- - - - - - - - 500 µA
IR VR = 400V, TC = +150oC - - 1.5 - - - - - - mA
VR = 500V, TC = +150oC - - - - - 1.5 - - - mA
VR = 600V, TC = +150oC - - - - - - - - 1.5 mA
tRR IF = 1A, dIF/dt = 100A/µs
-
- 45 -
- 45 -
- 45 ns
IF = 50A, dIF/dt = 100A/µs
-
- 50 -
- 50 -
- 50 ns
tA
IF = 50A, dIF/dt = 100A/µs
-
25
-
www.DataSheetBt4U.comIF = 50A, dIF/dt = 100A/µs
-
20
-
- 25 -
- 20 -
- 25 -
- 20 -
ns
ns
QRR
IF = 50A, dIF/dt = 100A/µs
-
65
-
- 65 -
- 65 -
nC
CJ
RθJC
VR = 10V, IF = 0A
- 140 -
- 140 -
- 140 -
pF
- - 1.0 - - 1.0 - - 1.0 oC/W
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
tRR = Reverse recovery time (See Figure 2), summation of tA + tB.
tA = Time to reach peak reverse current (See Figure 2).
tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2).
RθJC = Thermal resistance junction to case.
EAVL = Controlled avalanche energy (See Figures 10 and 11).
pw = pulse width.
D = Duty cycle.
V1 AMPLITUDE CONTROLS IF
V2 AMPLITUDE CONTROLS dIF/dt
L1 = SELF INDUCTANCE OF
R4 + LLOOP
R1
+V1
0
t2
t1
Q1
R2
0
-V2
t3
Q3
R3
+V3
Q2
t1 5tA(MAX)
t2 > tRR
t3 > 0
L1 tA(MIN)
R4 10
LLOOP
DUT
Q4
C1
-V4
R4
FIGURE 1. tRR TEST CIRCUIT
IF
0
dIF
dt
tRR
tA tB
0.25 IRM
IRM
VR
VRM
FIGURE 2. tRR WAVEFORMS AND DEFINITIONS
7-33




PDF 파일 내의 페이지 : 총 4 페이지

제조업체: Harris Semiconductor

( harris )

RHRG5040 diode

데이터시트 다운로드
:

[ RHRG5040.PDF ]

[ RHRG5040 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


RHRG5040

(RHRG5040 - RHRG5060) Hyperfast Diodes - Harris Semiconductor