(PDF) YG811S04R Datasheet

Número de pieza	YG811S04R
Descripción	Silicon Diode
Fabricantes	Fuji Electric
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No Preview Available ! YG811S04Rwww.DataSheet4U.com SCHOTTKY BARRIER DIODE (40V / 5A TO-22OF15) Outline Drawings 10.5±0.5 ø3.2 +0.2 -0.1 4.5±0.2 2.7±0.2 Features Low VF Super high speed switching. High reliability by planer design. Applications High speed power switching. Maximum Ratings and Characteristics Absolute Maximum Ratings 1.2±0.2 0.7±0.2 5.08±0.4 JEDEC EIAJ 0.6±0.2 2.7±0.2 SC-67 Connection Diagram 13 Item Symbol Conditions Rating Repetitive peak reverse voltage VRRM 40 Repetitive peak surge reverse voltage Isolating voltage Average output current Surge current VRSM Viso IO IFSM tw=500ns, duty=1/40 Terminals to Case, AC. 1min. duty=1/2, Tc=122°C Square wave Sine wave 10ms 48 1500 5 120 Operating junction temperature Tj -40 to +150 Storage temperature Tstg -40 to +150 Electrical Characteristics (Ta=25°C Unless otherwise specified ) Item Symbol Conditions Forward voltage drop VF IF=5.0A Reverse current IR VR=VRRM Thermal resistance Rth(j-c) Junction to case Mechanical Characteristics Max. 0.55 5.0 5.0 Mounting torque Weight Recommended torque 0.3 to 0.5 2.3 Unit V V V A A °C °C Unit V mA °C/W N·m g 1 page

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PDF YG811S04R Data sheet ( Hoja de datos )