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Osram Opto Semiconductors |
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GaAlAs-Infrarot-Lumineszenzdiode (880 nm)
GaAlAs Infrared Emitting Diode (880 nm)
F 1047A
F 1047B
Vorläufige Daten / Preliminary Data
Wesentliche Merkmale
• Typ. Gesamtleistung: 22 mW @ 100 mA im
TOPLED® Gehäuse
• Chipgröße 300 x 300 µm2
• GaAlAs-LED mit sehr hohem Wirkungsgrad
• Hohe Zuverlässigkeit
• Hohe Impulsbelastbarkeit
• Gute spektrale Anpassung an
Si-Fotoempfänger
• Vorderseitenmetallisierung: Aluminium
Rückseitenmetallisierung: Goldlegierung
• Lieferung: vereinzelt auf Folie
Features
• Typ. total radiant power: 22 mW @ 100 mA in
TOPLED® package.
• Chipsize: 300 x 300 µm²
• Very highly efficient GaAlAs LED
• High reliability
• High pulse handling capability
• Good spectral match to silicon photodetectors
• Frontside metallization: aluminum
Backside metallization: gold alloy
• Delivery: diced on foil
Anwendungen
• IIR-Fernsteuerung von Fernseh-, Rundfunk-
und Videogeräten, Lichtdimmern
• Gerätefernsteuerungen für Gleich- und
Wechsellichtbetrieb
• Lichtschranken bis 500 kHz
• Sensorik
• Diskrete Optokoppler
Applications
• IR remote control for hifi and TV sets, video
tape recorder, dimmers
• Remote control for steady and varying
intensity
• Light-reflection switches (max. 500 kHz)
• Sensor technology
• Discrete optocouplers
Typ
Type
F 1047A
F 1047B
Bestellnummer
Ordering Code
Q67220-C1386
on request
Beschreibung
Description
Infrarot emittierender Chip, Oberseite Kathodenanschluss
Infrared emitting die, top side cathode connection
Infrarot emittierender Chip, Oberseite Kathodenanschluss,
Oberfläche aufgerauht.
Infrared emitting die, top side cathode connection, surface
frosted
2003-04-11
1
www.DataSheet4U.com
F 1047A, F 1047B
Elektrische Werte (TA = 25 °C)
Electrical values1) (TA = 25 °C)
Bezeichnung
Parameter
Emissionswellenlänge
Peak wavelength
IF = 10 mA
Spektrale Bandbreite bei 50% von Imax,
Spectral bandwidth at 50% of Imax
IF = 10 mA
Schaltzeiten, Ie von 10% auf 90% und von 90% auf
10%, bei IF = 100 mA, RL = 50 Ω
Switching times, Ie from 10% to 90% and from 90%
to 10%, IF = 100 mA, RL = 50 Ω
Sperrspannung
Reverse voltage
IR = 1µA
Durchlaβspannung
Forward voltage
IF = 100 mA
Strahlungsleistung
Radiant Power3)
IF = 100 mA
F1047A
F1047B
Symbol
Symbol
λpeak
∆λ
tr, tf
VR
VF
Φe
min.
5
Wert
Value2)
typ.
880
max.
Einheit
Unit
nm
100 nm
0.5/0.4
µs
V
1.9 V
12 mW
14 mW
Photostrom (Spezifikationsparameter)
Photocurrent (specified parameter)
IF = 100 mA
F1047A
F1047B
Ie
0.50
0.65
a.u.
a.u.
1) Measurement limits describe actual settings and do not include measurement uncertainties. Each wafer and each
fragment of a wafer is subject to final testing. The wafer or its pieces are individually attached on foils (ring). Sample
chips are picked from each foil and placed on a special carrier for measurement purposes. The sampling density is one
chip per 1cm². If a sample fails, the area around that sample is tested again by taking samples in fourfold density. If a
sample fails in that measurement, an area of 0,25 cm² around each failed sample is marked by pen.
All el. values are referenced to the vendor's measurement system (correlation to customer product(s) is required)
2) Typical (refered to as typ.) data are defined as long-term production mean values and are only given for information.
This is not a specified value
3) Radiant power is measured on TO-18 header in integrating sphere.
2003-04-11
2
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