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GTM |
www.DataSheet4U.com
G B AV151
S U RFAC E MO U NT, S WIT C HI NG D IO DE
VOLTAGE 40V, CURRENT 0. 1A
Description
The GBAV151 is designed for ultra high speed switching application.
Package Dimensions
ISSUED DATE :2005/07/14
REVISED DATE :
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40 -
0.85 1.15
0 10
Absolute Maximum Ratings (At TA = 25
Parameter
Max. Peak Reverse Voltage
Max. Reverse Voltage
Max. Average Forward Rectified Current
Non-Repetitive Peak Forward surge Current @Tp =1.0us
@Tp =1.0s
Power Dissipation
Junction Temperature
Storage Temperature
unless otherwise specified)
Symbol
Ratings
VRM 40
VR 40
Io 100
IFSM
225
500
PD 225
TJ 150
TSTG
-55 ~ +150
Unit
V
V
mA
mA
mW
Electrical Characteristics (At TA = 25 unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
Test Conditions
Reverse Breakdown Voltage
V(BR)R
40
-
V IR=100 A
Forward Voltage
VF - 1.2 V IF=100mA
Reverse Voltage Leakage Current
IR
-
100
nA VR=35V
Diode Capacitance
CD - 2.0 pF VR=0V, f=1.0MHz
Reverse Recovery Time (Figure 1)
trr
-
3.0
ns IF=10mA, VR=6V, RL=100 , Irr=0.1IR
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ISSUED DATE :2005/07/14
REVISED DATE :
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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