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GBAS70S 반도체 회로 부품 판매점

SURFACE MOUNT SCHOTTKY BARRIER DIODE



GTM 로고
GTM
GBAS70S 데이터시트, 핀배열, 회로
www.DataSheet4U.com
CORPORATION ISSUED DATE :2003/04/10
REVISED DATE :2005/12/28B
GBAS70/A/C/S
S U RFAC E MO U NT, SC HOT T KY B AR RIE R DIO DE
VOLTAGE 70V, CURRENT 70mA
Description
These Schottky barrier diodes are designed for high speed switching applications, circuit protection and
voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is
excellent for hand held and portable applications where space is limited.
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40 -
0.85 1.15
0° 10°
Absolute Maximum Ratings at TA = 25
Parameter
Operating Junction Temperature
Storage Temperature
Maximum Repetitive Peak Reverse Voltage
Maximum Average Forward Rectified Current
Non- Repetitive Peak Forward Surge Current @ tp 1.0s
Thermal Resistance Junction to Ambient Air
Total Power Dissipation
Symbol
Tj
Tstg
VRRM
Io
IFSM
R JA
PD
Electrical Characteristics (at TA = 25
Parameter
Symbol
Reverse Breakdown Voltage
V(BR)R
Forward Voltage
VF
Reverse Leakage Current
Total Capacitance
Reverse Recover Time
IR
CT
Trr
unless otherwise noted)
Min.
Typ.
Max.
70 -
-
- - 410
- - 750
- - 1000
- 100
- 10
- - 2.0
- - 5.0
Ratings
+125
-65 ~ +125
70
70
100
445
225
Unit
V
mA
mA
/W
mW
Unit
V
mV
nA
uA
pF
ns
Test Conditions
IR=10 A
IF1=1mA
IF1=10mA
IF2=15mA
VR1=50V
VR2=70V
VR=0V, f=1MHz
IF=IR=10mA, RL=100 , Irr=1mA
GBAS70/A/C/S
Page: 1/2


GBAS70S 데이터시트, 핀배열, 회로
Characteristics Curve
CORPORATION ISSUED DATE :2003/04/10
REVISED DATE :2005/12/28B
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GBAS70/A/C/S
Page: 2/2




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GBAS70S diode

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