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GBAS40-04 반도체 회로 부품 판매점

SURFACE MOUNT SCHOTTKY BARRIER DIODE



GTM 로고
GTM
GBAS40-04 데이터시트, 핀배열, 회로
www.DataSheet4U.com
CORPORATION ISSUED DATE :2003/05/05
REVISED DATE :2005/12/20B
GBAS40 thru GBAS40-06
S U RFAC E MO U NT, SC HOT T KY B AR RIE R DIO DE
VOLTAGE 40V, CURRENT 0. 2A
Description
These schottky barrier diodes are designed for high speed switching applications, circuit protection and voltage
clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is
excellent for hand held and portable applications where space is limited.
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40 -
0.85 1.15
0° 10°
Absolute Maximum Ratings at TA = 25
Parameter
Operating Junction Temperature
Storage Temperature
Maximum Repetitive Peak Reverse Voltage
Thermal Resistance Junction to Ambient Air
Peak Forward Surge Current at tp < 1.0s
Maximum Average Forward Rectified Current
Total Power Dissipation
Symbol
Tj
Tstg
VRRM
R JA
IFSM
Io
PD
Electrical Characteristics (at TA = 25
Parameter
Symbol
Reverse Breakdown Voltage
V(BR)R
Forward Voltage(tp < 300uS)
VF
Reverse Leakage Current
Total Capacitance
Reverse Recover Time
IR
CT
Trr
unless otherwise noted)
Min.
Typ.
Max.
40 -
-
- - 380
- - 1000
- 200
- - 5.0
- - 5.0
Ratings
-55 ~ +125
-55 ~ +150
40
445
0.6
0.2
225
Unit
V
/W
A
A
mW
Unit
V
mV
nA
pF
ns
Test Conditions
IR=10 A
IF1=1mA
IF2=40mA
VR=30V
VR=0V, f=1MHz
IF=IR=10mA, RL=100 , Irr=1mA
GBAS40
Page: 1/2


GBAS40-04 데이터시트, 핀배열, 회로
Characteristics Curve
CORPORATION ISSUED DATE :2003/05/05
REVISED DATE :2005/12/20B
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GBAS40
Page: 2/2




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GBAS40-04 diode

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