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PDF LN175 Data sheet ( Hoja de datos )
| Número de pieza | LN175 | |
| Descripción | GaAlAs Infrared Light Emitting Diode | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de LN175 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Infrared Light Emitting Diodes
LN175
GaAlAs Infrared Light Emitting Diode
For optical control systems
Features
High-power output, high-efficiency : PO = 12 mW (typ.)
Emitted light spectrum suited for silicon photodetectors :
λP = 900 nm (typ.)
Good radiant power output linearity with respect to input current
Wide directivity : θ = 120 deg. (typ.)
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
* f = 100 Hz, Duty cycle = 0.1 %
Symbol Ratings
PD 170
IF 100
IFP* 2
VR 3
Topr –25 to +85
Tstg – 40 to +100
Unit
mW
mA
A
V
˚C
˚C
4.5±0.15
3.5±0.15
Unit : mm
2.1±0.15
1.6±0.15
0.8±0.1
2-1.2±0.3
2-0.45±0.15
1 2.54 2
0.45±0.15
1: Cathode
2: Anode
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Capacitance between pins
Response time
Half-power angle
Symbol
PO
λP
∆λ
VF
IR
Ct
tr, tf
θ
Conditions
IF = 100mA
IF = 100mA
IF = 100mA
IF = 100mA
VR = 3V
VR = 0V, f = 1MHz
IF = 100mA
The angle in which radiant intencity is 50%
min typ max Unit
7 12
mW
900 nm
70 nm
1.4 1.7
V
10 µA
50 pF
700 ns
120 deg.
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet LN175.PDF ] | |
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