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PDF LN172 Data sheet ( Hoja de datos )
| Número de pieza | LN172 | |
| Descripción | GaAlAs Infrared Light Emitting Diode | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Infrared Light Emitting Diodes
LN172
GaAlAs Infrared Light Emitting Diode
For optical control systems
Features
High-power output, high-efficiency : PO = 12 mW (typ.)
Light emitting spectrum suited for silicon photodetectors :
λP = 900 nm (typ.)
Good optical power output linearity with respect to input current
Wide directivity : θ = 100 deg. (typ.)
Long lifetime, high reliability
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
* f = 100 Hz, Duty cycle = 0.1 %
Symbol Ratings
PD 170
IF 100
IFP* 2
VR 3
Topr –25 to +85
Tstg –30 to +100
Unit
mW
mA
A
V
˚C
˚C
ø4.2
+0.2
–0.1
Unit : mm
2-ø0.45±0.05
21
2.54±0.25 1: Cathode
2: Anode
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Radiant power
PO IF = 100mA
7 12
mW
Peak emission wavelength
λP IF = 100mA
900 nm
Spectral half band width
∆λ IF = 100mA
70 nm
Forward voltage (DC)
VF IF = 100mA
1.4 1.7
V
Reverse current (DC)
IR VR = 3V
10 µA
Capacitance between pins
Ct VR = 0V, f = 1MHz
50 pF
Response time
tr, tf IF = 100mA
700 ns
Half-power angle
θ The angle in which radiant intencity is 50%
100
deg.
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet LN172.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| LN172 | GaAlAs Infrared Light Emitting Diode | Panasonic Semiconductor |
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