파트넘버.co.kr LN152 데이터시트 PDF


LN152 반도체 회로 부품 판매점

GaAs Infrared Light Emitting Diode



Panasonic Semiconductor 로고
Panasonic Semiconductor
LN152 데이터시트, 핀배열, 회로
Infrared Light Emitting Diodes
LN152
GaAs Infrared Light Emitting Diode
For optical control systems
Features
High-power output, high-efficiency : PO = 10 mW (typ.)
Wide directivity, matched for external optical systems : θ = 100 deg.
Infrared light emission close to monochromatic light :
λP = 950 nm (typ.)
Optimum for mesuring instruments and control equipments
in conbination with silicon photodetectors
High-speed modulation
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
* f = 100 Hz, Duty cycle = 0.1 %
Symbol Ratings
PD 160
IF 100
IFP* 1.5
VR 3
Topr –25 to +85
Tstg –30 to +100
Unit
mW
mA
A
V
˚C
˚C
Unit : mm
2-ø0.45±0.05
21
2.54±0.2
1: Anode
2: Cathode
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Capacitance between pins
Rise time
Fall time
Half-power angle
PO IF = 100mA
5 10
mW
λP IF = 100mA
950 nm
∆λ IF = 100mA
50 nm
VF IF = 100mA
1.3 1.6
V
IR VR = 3V
10 µA
Ct VR = 0V, f = 1MHz
60 pF
tr
tf
IFP = 100mA
1 µs
1 µs
θ The angle in which radiant intencity is 50%
100
deg.
1


LN152 데이터시트, 핀배열, 회로
Infrared Light Emitting Diodes
LN152
IF — Ta
120
100
80
60
40
20
0
– 25 0
20 40 60 80 100
Ambient temperature Ta (˚C )
IFP — Duty cycle
10 2
tw = 10µs
Ta = 25˚C
10
1
10 –1
10 –2
10 –3
10 –2
10 –1
1
10
Duty cycle (%)
10 2
IFP — VF
tw = 10µs
10 3 f = 100Hz
Ta = 25˚C
10 2
10
1
10 –1
10 –2
0
1234
Forward voltage VF (V)
5
PO — IFP
10 3
(1) tw = 10µs
f = 100Hz
(2) DC
Ta = 25˚C
10 2
10 (1)
1 (2)
10 –1
1.6
1.2
0.8
0.4
VF — Ta
IF = 100mA
50mA
10mA
10
1
PO — Ta
IF = 50mA
10 –2
1
10 10 2 10 3 10 4
Pulse forward current IFP (mA)
0
– 40 0
40 80 120
Ambient temperature Ta (˚C )
10 –1
– 40
0
40 80
Ambient temperature Ta (˚C )
λP — Ta
Spectral characteristics
1000
IF = 100mA
100
IF = 100mA
Ta = 25˚C
980 80
960 60
940 40
Directivity characteristics
0˚ 10˚ 20˚ 30˚
40˚
100
80 50˚
60 60˚
40 70˚
20 80˚
90˚
920 20
900
– 40
0
40 80 120
Ambient temperature Ta (˚C )
0
800 850 900 950 1000 1050 1100
Wavelength λ (nm)
2




PDF 파일 내의 페이지 : 총 2 페이지

제조업체: Panasonic Semiconductor

( panasonic )

LN152 diode

데이터시트 다운로드
:

[ LN152.PDF ]

[ LN152 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


LN15

Single Jacket Non-Armored - Samsung semiconductor



LN151

GaAs Infrared Light Emitting Diodes - Panasonic Semiconductor



LN151F

GaAs Infrared Light Emitting Diodes - Panasonic Semiconductor



LN151L

GaAs Infrared Light Emitting Diodes - Panasonic Semiconductor



LN152

GaAs Infrared Light Emitting Diode - Panasonic Semiconductor



LN159

GaAs Bi-directional Infrared Light Emitting Diode - Panasonic Semiconductor



LN15XB60

Bridge Bridge - SHINDENGEN



LN15XB60H

Bridge Bridge - SHINDENGEN