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BAT54J
Schottky barrier single diode
Rev. 01 — 8 March 2007
Product data sheet
1. Product profile
1.1 General description
Planar Schottky barrier single diode with an integrated guard ring for stress protection,
encapsulated in a SOD323F (SC-90) very small and flat lead Surface-Mounted Device
(SMD) plastic package.
1.2 Features
I Low forward voltage
I Very small and flat lead SMD plastic package
I Low capacitance
I Flat leads: excellent coplanarity and improved thermal behavior
1.3 Applications
I Voltage clamping
I Line termination
I Reverse polarity protection
1.4 Quick reference data
Table 1.
Symbol
IF
VR
VF
Quick reference data
Parameter
forward current
reverse voltage
forward voltage
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Conditions
IF = 1 mA
Min Typ Max Unit
- - 200 mA
- - 30 V
[1] - - 320 mV
NXP Semiconductors
BAT54J
Schottky barrier single diode
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1] The marking bar indicates the cathode.
3. Ordering information
Simplified outline
[1]
12
Symbol
1
2
sym001
Table 3. Ordering information
Type number Package
Name
Description
BAT54J
SC-90
plastic surface-mounted package; 2 leads
Version
SOD323F
4. Marking
Table 4. Marking codes
Type number
BAT54J
Marking code
AP
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VR reverse voltage
IF forward current
IFRM
repetitive peak forward
tp ≤ 1 s; δ ≤ 0.5
current
-
-
-
IFSM
Ptot
Tj
Tamb
Tstg
non-repetitive peak forward
current
total power dissipation
junction temperature
ambient temperature
storage temperature
square wave;
tp < 10 ms
Tamb ≤ 25 °C
-
[1] -
-
−65
−65
Max Unit
30 V
200 mA
300 mA
600 mA
550
150
+150
+150
mW
°C
°C
°C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
cathode 1 cm2.
BAT54J_1
Product data sheet
Rev. 01 — 8 March 2007
© NXP B.V. 2007. All rights reserved.
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