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Silicon PIN diode
FEATURES
· High speed switching for RF signals
· Low diode capacitance
· Low diode forward resistance
· Very low series inductance
· For applications up to 3 GHz.
APPLICATIONS
· RF attenuators and switches.
DESCRIPTION
Planar PIN diode in a SOD323 small SMD plastic package.
BAP63 – 03
1
2
SOD523 SC-79
1
CATHODE
2
ANODE
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VR
I IF
P tot
T stg
Tj
PARAMETER
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
junction temperature
CONDITIONS
T s < 90°C
MIN.
–
–
–
-65
-65
MAX.
50
100
500
+150
+150
ELECTRICAL CHARACTERISTICS T j = 25°C unless otherwise specified.
SYMBOL PARAMETER
CONDITIONS
V F forward voltage
I R reverse current
C d diode capacitance
r D diode forward resistance
|s 21| 2
isolation
|s 21| 2
insertion loss
|s 21| 2
insertion loss
|s 21| 2
insertion loss
|s 21| 2
insertion loss
I F =50 mA
V R =35 V
V R = 0; f = 1 MHz
V R = 1 V; f = 1 MHz
V R = 20 V; f = 1 MHz
I F = 0.5 mA; f = 100 MHz; note 1
I F = 1 mA; f = 100 MHz; note 1
I F = 10 mA; f = 100 MHz; note 1
I F = 100 mA; f = 100 MHz; note 1
V R = 0; f = 900 MHz
V R = 0; f = 1800 MHz
V R = 0; f = 2450 MHz
I F = 0.5 mA; f = 900 MHz
I F = 0.5 mA; f = 1800 MHz
I F = 0.5 mA; f = 2450 MHz
I F = 1 mA; f = 900 MHz
I F = 1 mA; f = 1800 MHz
I F = 1 mA; f = 2450 MHz
I F = 10 mA; f = 900 MHz
I F = 10 mA; f = 1800 MHz
I F = 10 mA; f = 2450 MHz
I F = 100 mA; f = 900 MHz
I F = 100mA; f = 1800 MHz
I F = 100 mA; f = 2450 MHz
TYP.
0.95
–
0.4
0.35
0.27
2.5
1.95
1.17
0.9
15.4
10.1
7.8
0.21
0.28
0.38
0.18
0.26
0.35
0.13
0.20
0.30
0.10
0.18
0.28
MAX.
1.1
10
–
–
0.32
3.5
3
1.8
1.5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
UNIT
V
mA
mW
°C
°C
UNIT
V
nA
pF
pF
pF
Ω
Ω
Ω
Ω
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
S25–1/2
BAP63-03
ELECTRICAL CHARACTERISTICS T j = 25°C unless otherwise specified. (Continue)
SYMBOL
PARAMETER
CONDITIONS
TYP.
τ L charge carrier life time
LS
Note
series inductance
when switched from I F =10 mA to
I R = 6 mA; R L = 100 Ω;
measured at I R =3 mA
310
1.5
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
MAX. UNIT
– ns
– nH
THERMALCHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to soldering-point
VALUE
120
UNIT
K/W
10
f = 100 MHz; T =25°C
j
1
10 -1
10 -1
1
I F (mA )
10
Fig.1 Forward resistance as a function of
forward current; typical values.
10 2
0
(1) I F =100 mA.
(2) I =10 mA.
F
-0.1 (3) I F = 1 mA.
(4) I = 0.5 mA.
F
-0.2
-0.3
-0.4
Diode inserted in series with a 50 Ω stripline circuit and
biased via the analyzer Tee network.
Tamb =25°C.
-0.5
01 2
f (GHz )
3
Fig.3 Insertion loss ( |s 21| 2 )of the diode in on-state
as a function of frequency; typical values.
500
400
300
200
100
f = 1 MHz; T =25°C
j
0
04
8 12
VR(V)
16
Fig.2 Diode capacitance as a function of
reverse voltage; typical values.
20
0
- 10
- 20
- 30
- 40
0
Diode zero biased and inserted in
series with a 50 Ω stripline circuit.
Tamb =25°C.
12
f (GHz )
3
Fig.4 Isolation ( |s 21| 2 ) of the diode in off-state as a
function of frequency; typical values.
S25–2/2
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