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BAP63-03 반도체 회로 부품 판매점

Silicon PIN diode



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BAP63-03 데이터시트, 핀배열, 회로
www.DataSheet4U.com
Silicon PIN diode
FEATURES
· High speed switching for RF signals
· Low diode capacitance
· Low diode forward resistance
· Very low series inductance
· For applications up to 3 GHz.
APPLICATIONS
· RF attenuators and switches.
DESCRIPTION
Planar PIN diode in a SOD323 small SMD plastic package.
BAP63 – 03
1
2
SOD523 SC-79
1
CATHODE
2
ANODE
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VR
I IF
P tot
T stg
Tj
PARAMETER
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
junction temperature
CONDITIONS
T s < 90°C
MIN.
-65
-65
MAX.
50
100
500
+150
+150
ELECTRICAL CHARACTERISTICS T j = 25°C unless otherwise specified.
SYMBOL PARAMETER
CONDITIONS
V F forward voltage
I R reverse current
C d diode capacitance
r D diode forward resistance
|s 21| 2
isolation
|s 21| 2
insertion loss
|s 21| 2
insertion loss
|s 21| 2
insertion loss
|s 21| 2
insertion loss
I F =50 mA
V R =35 V
V R = 0; f = 1 MHz
V R = 1 V; f = 1 MHz
V R = 20 V; f = 1 MHz
I F = 0.5 mA; f = 100 MHz; note 1
I F = 1 mA; f = 100 MHz; note 1
I F = 10 mA; f = 100 MHz; note 1
I F = 100 mA; f = 100 MHz; note 1
V R = 0; f = 900 MHz
V R = 0; f = 1800 MHz
V R = 0; f = 2450 MHz
I F = 0.5 mA; f = 900 MHz
I F = 0.5 mA; f = 1800 MHz
I F = 0.5 mA; f = 2450 MHz
I F = 1 mA; f = 900 MHz
I F = 1 mA; f = 1800 MHz
I F = 1 mA; f = 2450 MHz
I F = 10 mA; f = 900 MHz
I F = 10 mA; f = 1800 MHz
I F = 10 mA; f = 2450 MHz
I F = 100 mA; f = 900 MHz
I F = 100mA; f = 1800 MHz
I F = 100 mA; f = 2450 MHz
TYP.
0.95
0.4
0.35
0.27
2.5
1.95
1.17
0.9
15.4
10.1
7.8
0.21
0.28
0.38
0.18
0.26
0.35
0.13
0.20
0.30
0.10
0.18
0.28
MAX.
1.1
10
0.32
3.5
3
1.8
1.5
UNIT
V
mA
mW
°C
°C
UNIT
V
nA
pF
pF
pF
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
S25–1/2


BAP63-03 데이터시트, 핀배열, 회로
BAP63-03
ELECTRICAL CHARACTERISTICS T j = 25°C unless otherwise specified. (Continue)
SYMBOL
PARAMETER
CONDITIONS
TYP.
τ L charge carrier life time
LS
Note
series inductance
when switched from I F =10 mA to
I R = 6 mA; R L = 100 ;
measured at I R =3 mA
310
1.5
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
MAX. UNIT
– ns
– nH
THERMALCHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to soldering-point
VALUE
120
UNIT
K/W
10
f = 100 MHz; T =25°C
j
1
10 -1
10 -1
1
I F (mA )
10
Fig.1 Forward resistance as a function of
forward current; typical values.
10 2
0
(1) I F =100 mA.
(2) I =10 mA.
F
-0.1 (3) I F = 1 mA.
(4) I = 0.5 mA.
F
-0.2
-0.3
-0.4
Diode inserted in series with a 50 stripline circuit and
biased via the analyzer Tee network.
Tamb =25°C.
-0.5
01 2
f (GHz )
3
Fig.3 Insertion loss ( |s 21| 2 )of the diode in on-state
as a function of frequency; typical values.
500
400
300
200
100
f = 1 MHz; T =25°C
j
0
04
8 12
VR(V)
16
Fig.2 Diode capacitance as a function of
reverse voltage; typical values.
20
0
- 10
- 20
- 30
- 40
0
Diode zero biased and inserted in
series with a 50 stripline circuit.
Tamb =25°C.
12
f (GHz )
3
Fig.4 Isolation ( |s 21| 2 ) of the diode in off-state as a
function of frequency; typical values.
S25–2/2




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BAP63-03 diode

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