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PDF 6509A Data sheet ( Hoja de datos )
| Número de pieza | 6509A | |
| Descripción | Isolated Diode Array | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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SCOTTSDALE DIVISION
6509A
Isolated Diode Array with
HiRel MQ, MX, MV, and SP Screening Options
DESCRIPTION
These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated
by a planar process and mounted in a 14-PIN ceramic DIP package for use as steering
diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing them to
the positive side of the power supply line and to ground (see Figure 1). An external
TVS diode may be added between the positive supply line and ground to prevent over-
voltage on the supply rail. They may also be used in fast switching core-driver
applications. This includes computers and peripheral equipment such as magnetic
cores, thin-film memories, plated-wire memories, etc., as well as decoding or encoding
applications. These arrays offer many advantages of integrated circuits such as high-
density packaging and improved reliability. This is a result of fewer pick and place
operations, smaller footprint, smaller weight, and elimination of various discrete
packages that may not be as user friendly in PC board mounting.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
APPEARANCE
14-PIN Ceramic DIP
FEATURES
•
•
•
•
•
•
www.DataSheet4U.com
Hermetic Ceramic Package
Isolated Diodes To Eliminate Cross-Talk Voltages
High Breakdown Voltage VBR > 60 V at 10 μA
Low Leakage IR< 100nA at 40 V
Low Capacitance C < 8.0 pF
Options for screening in accordance with MIL-PRF-
19500/474 for JAN, JANTX, JANTXV, and JANS are
available by adding MQ, MX, MV, or SP prefixes
respectively to part numbers. For example, designate
MX6509A for a JANTX screen.
MAXIMUM RATINGS
• Reverse Breakdown Voltage of 60 Vdc (Note 1 & 2)
• Continuous Forward Current of 300 mA dc (Note 1 & 3)
• Peak Surge Current (tp=1/120 s) of 500 mA dc (Note 1)
• 400 mW Power Dissipation per Junction @ 25oC
• 600 mW Power Dissipation per Package @ 25oC (Note 4)
• Operating Junction Temperature range –65 to +150oC
• Storage Temperature range of –65 to +150oC
NOTE 1: Each Diode
NOTE 2: Pulsed: PW = 100 ms max; duty cycle <20%
NOTE 3: Derate at 2.4 mA/oC above +25oC
NOTE 4: Derate at 4.8 mW/oC above +25oC
APPLICATIONS / BENEFITS
• High Frequency Data Lines
• RS-232 & RS-422 Interface Networks
• Ethernet: 10 Base T
• Computer I/O Ports
• LAN
• Switching Core Drivers
• IEC 61000-4 Compatible (see circuit in figure 1)
61000-4-2 ESD: Air 15 kV, contact 8 kW
61000-4-4 (EFT): 40 A – 5/50 ns
61000-4-5 (surge): 12 A 8/20 μs
MECHANICAL AND PACKAGING
• 14-PIN Ceramic DIP
• Weight 2.05 grams (approximate)
• Marking: Logo, part number, date code
• Pin #1 to the left of the indent on top of package
• Carrier tubes; 25 pcs (standard)
ELECTRICAL CHARACTERISTICS (Per Diode) @ 25oC unless otherwise specified
PART
NUMBER
6509A
MAXIMUM
FORWARD
VOLTAGE
VF1
IF = 100 mA
(Note 1)
V
1
MAXIMUM
FORWARD
VOLTAGE
VF2
IF = 500 mA
(Note 1)
V
1.5
MAXIMUM
REVERSE
CURRENT
IR1
VR = 40 V
μA
0.1
MAXIMUM
CAPACITANCE
(PIN TO PIN)
Ct
VR = 0 V
F = 1 MHz
pF
8.0
MAXIMUM
FORWARD
RECOVERY TIME
tfr
IF = 500 mA
ns
40
MAXIMUM
REVERSE
RECOVERY TIME
trr
IF = IR = 200 mA
irr = 20 mA
RL = 100 ohms
ns
20
NOTE 1: Pulsed: PW = 300 µs +/- 50 µs, duty cycle <2%, 90 µs after leading edge.
Copyright © 2007
3-27-2007
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 6509A.PDF ] | |
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