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PDF MV409 Data sheet ( Hoja de datos )
| Número de pieza | MV409 | |
| Descripción | Silicon Tuning Diode | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
Silicon Tuning Diode
These devices are designed forgeneral frequency control and tuning applications.
They provide solid- state reliability in replacement of mechanical tuning methods.
• High Q with Guaranteed Minimum Values at VHF Frequencies
• Controlled and Uniform Tuning Ratio
• Available in Surface Mount Package
MMBV409LT1
MV409
VOLTAGE VARIABLE
CAPACITANCE DIODES
3
3
CATHODE
1
ANODE
1
2
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
Junction Temperature
Storage Temperature Range
DEVICE MARKING
MMBV409LT1 = X5, MV409 = MV409
Symbol
VR
IF
PD
TJ
Tstg
CASE 318–08, STYLE 8
SOT– 23 (TO–236AB)
MBV409
20
200
MMBV409LT1
20
200
Unit
Vdc
mAdc
280 225
2.8 1.8
+125
–55 to +150
mW
mW/°C
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Reverse Breakdown Voltage
(IR = 10 µAdc)
V(BR)R
20
—
— Vdc
Reverse Voltage Leakage Current
(VR = 15 Vdc)
IR — — 0.1 µAdc
Diode Capacitance Temperature Coefficient
(VR = 3.0 Vdc, f = 1.0 MHz)
TCC — 300 — ppm/°C
Ct, Diode Capacitance
VR = 3.0 Vdc, f = 1.0 MHz
pF
Device
Min Nom Max
MMBV409LT1, MV409
26 29 32
1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 8 Vdc.
Q, Figure of Merit
VR = 3.0 Vdc
f = 50 MHz
Min
200
CR, Capacitance Ratio
C3/C8
f = 1.0 MHz(1)
Min Max
1.5 1.9
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MV409.PDF ] | |
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