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BAS19LT1, BAS20LT1,
BAS21LT1, BAS21DW5T1
Preferred Devices
High Voltage
Switching Diode
Features
• Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol
Continuous Reverse Voltage
BAS19
BAS20
BAS21
VR
Repetitive Peak Reverse Voltage
BAS19
BAS20
BAS21
VRRM
Continuous Forward Current
Peak Forward Surge Current
Junction and Storage Temperature
Range
IF
IFM(surge)
TJ, Tstg
Power Dissipation (Note 1)
Electrostatic Discharge
PD
ESD
Value
120
200
250
120
200
250
200
625
−55 to
+150
385
HM < 500
Unit
Vdc
Vdc
mAdc
mAdc
°C
mW
V
MM < 400
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Mounted on FR−5 Board = 1.0 x 0.75 x 0.062 in.
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HIGH VOLTAGE
SWITCHING DIODE
SOT−23
31
CATHODE
ANODE
SC−88A
5
CATHODE
1
ANODE
4
CATHODE
3
ANODE
MARKING DIAGRAMS
33
1
2
SOT−23 (TO−236)
CASE 318
STYLE 8
Jx M G
G
12
54
3
1
SC−88A (SOT−353)
CASE 419A
Jx M G
G
12 3
x = P, R, or S
P = BAS19LT1
R = BAS20LT1
S = BAS21LT1 or BAS21DW5T1
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon the manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2007
January, 2007 − Rev. 9
1
Publication Order Number:
BAS19LT1/D
BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1
THERMAL CHARACTERISTICS (SOT−23)
Characteristic
Total Device Dissipation FR−5 Board
(Note 2)
TA = 25°C
Derate above 25°C
Thermal Resistance
Junction−to−Ambient (SOT−23)
Total Device Dissipation Alumina Substrate
(Note 3)
TA = 25°C
Derate above 25°C
Thermal Resistance Junction−to−Ambient
Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS (SC−88A)
Characteristic
Power Dissipation (Note 4)
Thermal Resistance −
Junction−to−Ambient
Derate Above 25°C
Maximum Junction Temperature
Operating Junction and Storage Temperature Range
2. FR−5 = 1.0 0.75 0.062 in.
3. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
4. Mounted on FR−5 Board = 1.0 x 0.75 x 0.062 in.
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
Max
225
1.8
556
300
2.4
417
−55 to +150
Symbol
PD
RqJA
TJmax
TJ, Tstg
Max
385
328
3.0
150
−55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Unit
mW
°C/W
mW/°C
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Reverse Voltage Leakage Current
(VR = 100 Vdc)
(VR = 150 Vdc)
(VR = 200 Vdc)
(VR = 100 Vdc, TJ = 150°C)
(VR = 150 Vdc, TJ = 150°C)
(VR = 200 Vdc, TJ = 150°C)
BAS19
BAS20
BAS21
BAS19
BAS20
BAS21
Reverse Breakdown Voltage
(IBR = 100 mAdc)
(IBR = 100 mAdc)
(IBR = 100 mAdc)
BAS19
BAS20
BAS21
Forward Voltage
(IF = 100 mAdc)
(IF = 200 mAdc)
Diode Capacitance (VR = 0, f = 1.0 MHz)
Reverse Recovery Time (IF = IR = 30 mAdc, IR(REC) = 3.0 mAdc, RL = 100)
Symbol
IR
V(BR)
VF
CD
trr
Min
−
−
−
−
−
−
120
200
250
−
−
−
−
Max Unit
mAdc
0.1
0.1
0.1
100
100
100
Vdc
−
−
−
Vdc
1.0
1.25
5.0 pF
50 ns
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