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BAS21DW5T1 반도체 회로 부품 판매점

(BAS19LT1 - BAS21xxx1) High Voltage Switching Diode



ON Semiconductor 로고
ON Semiconductor
BAS21DW5T1 데이터시트, 핀배열, 회로
www.DataSheet4U.com
BAS19LT1, BAS20LT1,
BAS21LT1, BAS21DW5T1
Preferred Devices
High Voltage
Switching Diode
Features
PbFree Packages are Available
MAXIMUM RATINGS
Rating
Symbol
Continuous Reverse Voltage
BAS19
BAS20
BAS21
VR
Repetitive Peak Reverse Voltage
BAS19
BAS20
BAS21
VRRM
Continuous Forward Current
Peak Forward Surge Current
Junction and Storage Temperature
Range
IF
IFM(surge)
TJ, Tstg
Power Dissipation (Note 1)
Electrostatic Discharge
PD
ESD
Value
120
200
250
120
200
250
200
625
55 to
+150
385
HM < 500
Unit
Vdc
Vdc
mAdc
mAdc
°C
mW
V
MM < 400
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Mounted on FR5 Board = 1.0 x 0.75 x 0.062 in.
http://onsemi.com
HIGH VOLTAGE
SWITCHING DIODE
SOT23
31
CATHODE
ANODE
SC88A
5
CATHODE
1
ANODE
4
CATHODE
3
ANODE
MARKING DIAGRAMS
33
1
2
SOT23 (TO236)
CASE 318
STYLE 8
Jx M G
G
12
54
3
1
SC88A (SOT353)
CASE 419A
Jx M G
G
12 3
x = P, R, or S
P = BAS19LT1
R = BAS20LT1
S = BAS21LT1 or BAS21DW5T1
M = Date Code
G = PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon the manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2007
January, 2007 Rev. 9
1
Publication Order Number:
BAS19LT1/D


BAS21DW5T1 데이터시트, 핀배열, 회로
BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1
THERMAL CHARACTERISTICS (SOT23)
Characteristic
Total Device Dissipation FR5 Board
(Note 2)
TA = 25°C
Derate above 25°C
Thermal Resistance
JunctiontoAmbient (SOT23)
Total Device Dissipation Alumina Substrate
(Note 3)
TA = 25°C
Derate above 25°C
Thermal Resistance JunctiontoAmbient
Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS (SC88A)
Characteristic
Power Dissipation (Note 4)
Thermal Resistance
JunctiontoAmbient
Derate Above 25°C
Maximum Junction Temperature
Operating Junction and Storage Temperature Range
2. FR5 = 1.0 0.75 0.062 in.
3. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
4. Mounted on FR5 Board = 1.0 x 0.75 x 0.062 in.
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
Max
225
1.8
556
300
2.4
417
55 to +150
Symbol
PD
RqJA
TJmax
TJ, Tstg
Max
385
328
3.0
150
55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Unit
mW
°C/W
mW/°C
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Reverse Voltage Leakage Current
(VR = 100 Vdc)
(VR = 150 Vdc)
(VR = 200 Vdc)
(VR = 100 Vdc, TJ = 150°C)
(VR = 150 Vdc, TJ = 150°C)
(VR = 200 Vdc, TJ = 150°C)
BAS19
BAS20
BAS21
BAS19
BAS20
BAS21
Reverse Breakdown Voltage
(IBR = 100 mAdc)
(IBR = 100 mAdc)
(IBR = 100 mAdc)
BAS19
BAS20
BAS21
Forward Voltage
(IF = 100 mAdc)
(IF = 200 mAdc)
Diode Capacitance (VR = 0, f = 1.0 MHz)
Reverse Recovery Time (IF = IR = 30 mAdc, IR(REC) = 3.0 mAdc, RL = 100)
Symbol
IR
V(BR)
VF
CD
trr
Min
120
200
250
Max Unit
mAdc
0.1
0.1
0.1
100
100
100
Vdc
Vdc
1.0
1.25
5.0 pF
50 ns
http://onsemi.com
2




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