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PDF YA846C04B Data sheet ( Hoja de datos )
| Número de pieza | YA846C04B | |
| Descripción | Schottky Barrier Diode | |
| Fabricantes | Fuji Electric | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de YA846C04B (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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S P E C I F I C AT I O N
Device Name ： SILICON DIODE
Model Name ： Schottky Barrier Diode
Type Name ： YA846C04B
Spec. No.
： MS5D1917
DATE
DRAWN SEP.-05-‘03
CHECKED SEP.-05-‘03
SEP.-05-‘03
NAME
APPROVED
Fuji Electric Co.,Ltd.
Matsumoto Factory
Fuji Electric Co.,Ltd.
MS5D1917
1/12
H04-004-07
1 page  
Test
No.
1
2
3
4
5
6
7
8
9
10
Test
Items
High Temp.
Storage
Low Temp.
Storage
Temperature
Humidity
Storage
Temperature
Humidity
Bias
Unsaturated
Pressurized
Vapor
Temperature
Cycle
Thermal
Shock
Steady state
Operating
life
Intermittent
Operating
life
High Temp.
Reverse
Bias
Testing methods and Conditions
Temperature :Ｔstg max
Test duration : 1000h
Temperature :Ｔstg min
Test duration : 1000h
Temperature : 85±2°C
Relative humidity : 85±5%
Test duration : 1000h
Temperature : 85±2°C
Relative humidity : 85±5%
Bias Voltage : VRRM× 0.8
Test duration : 1000h
Temperature : 130±2°C
Relative humidity : 85±5%
Vapor pressure : 230kPa
Test duration : 48h
High temp. side : Tstg max
Room temp. : 5～35℃
Low temp. side : Tstg min
Duration time : HT 30min,RT 5min LT 30min
Number of cycles : 100 cycles
Fluid : pure water(running water)
High temp. side : 100+0/-5°C
Low temp. side : 0+5/-0°C
Duration time : HT 5min,LT 5min
Number of cycles : 100 cycles
Ta=25±5°C
Rated load
Test duration : 1000h
Tj=Tjmax ～50℃
3min ON, 3min OFF
Test duration : 10000cy
Temperature : Ta=100 °C
Bias Voltage : VR=VRRM duty=1/2
Test duration : 1000h
Reference
Standard
EIAJ
ED4701
B-111A
B-112A
B-121A
test code C
B-122A
test code C
B-123A
test code B
B-131A
B-141A
test code A
D-402
D-403
D-404
Samplin
g
number
Acceptance
number
22
22
22
22
22
22 (0 : 1)
22
22
22
22
Failure Criteria
IR ≦USL x 2
VF≦USL x 1.1
USL : Upper specification Limit
Fuji Electric Co.,Ltd.
MS5D1917
5/12
H04-004-03
5 Page 
Current Derating (Io-Tc) (max.)
160 10000
150
140
130
120 DC
110
1000
Sine wave λ=180°
100
Square wave λ=180°
90
Square wave λ=120°
80
70
60
Square wave λ=60°
50
0 5 10 15 20 25 30 35 40 45
Ｉｏ Average Output Current （Ａ）
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
100
Junction Capacitance Characteristic (typ.)
10
ＶＲ Reverse Voltage （Ｖ）
100
Surge Capability (max.)
1000
100
10
1
10 100
Number of Cycles at 50Hz
Fuji Electric Co.,Ltd.
MS5D1917
11/12
H04-004-03
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet YA846C04B.PDF ] | |
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