RF051VA1S 반도체 회로 부품 판매점
Switching diode
|
|
 ROHM Semiconductor |
www.DataSheet4U.com
Diodes
Switching diode
RF051VA1S
RF051VA1S
zApplications
High frequency rectification
zFeatures
1) Surface mounting type
(TUMD2)
2) Very fast recovery.
3) High reliability.
zDimensions (Unit : mm)
CATHODE MARK
1 .3 ± 0.05
0.8 ± 0.05
zStructure
Silicon epitaxial planar
ROHM : TUMD2
zLand size figure (Unit : mm)
0 .1 7 ± 0.1
0 .0 5
1.1
0 .6 ± 0.2
0 .1
TUMD2
zStructure
zTaping dimensions (Unit : mm)
4.0±0.1 2.0±0.05
φ1.55±0.1
0
0.25±0.05
1.43±0.05
4.0±0.1
zAbsolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak （60Hz・1cyc）
Junction temperature
Storage temperature
zElectrical characteristic (Ta=25°C)
Parameter
Symbol
Forward voltage
Reverse current
Reverse recovery time
VF
IR
trr
Min.
-
-
-
Symbol
VRM
VR
Io
IFSM
Tj
Tstg
Typ. Max.
- 0.98
- 10
- 25
φ1.0±0.2
0
Limits
100
100
0.5
5
150
-55 to +150
0.9±0.08
Unit
V
V
A
A
℃
℃
Unit Conditions
V IF=0.5A
µA IF=100V
nA IF=0.5A, IR=1.0A, Irr=0.25∗IR
1/3
Diodes
RF051VA1S
zElectrical characteristic curves
1 1000000
Ta=75℃
0.1
Ta=125℃
Ta=150℃
0.01
Ta=25℃
Ta=-25℃
100000
10000
1000
100
10
0.001
0
200 400 600 800 1000 1200
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
1
0
Ta=150℃
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
20 40 60 80
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
100
10
f=f1=M1MHzHz
1
0 10 20
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
30
910 1000
Ta=25℃
900
900
IF=0.5A
n=30pcs
800
700
890 600
500
880 400
870 AVE:880.2mV
300
200
100
860 0
Ta=25℃
VR=100V
n=30pcs
AVE:147.6nA
10
9
8
7
6
5
4
3
2
1
0
Ta=25℃
f=1MHz
VR=0V
n=10pcs
AVE:3.13pF
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
50
45
40
35
30
25
20
15
10
5
0
1000
100
10
1
1
Ifsm 1cyc
8.3ms
AVE:11.6A
IFSM DISRESION MAP
Ifsm
t
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
100
1000
30
Ta=25℃
25 IF=0.5A
IR=1A
Ifsm
20
Irr=0.25*IR
100
8.3ms 8.3ms
n=10pcs
1cyc
15
10 AVE:5.30ns
5
10
0
trr DISPERSION MAP
1000
Rth(j-a)
100
Rth(j-c)
Mounted on epoxy board
10
IM=1mA
IF=10mA
1
0.001
1ms tim
300us
0.01 0.1 1 10 100
TIME:t(ms)
Rth-t CHARACTERISTICS
1000
1
1 10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
1
1素子当たり
0.8
0.6
D=1/2
DC
Sin(θ＝180)
0.4
0.2
0
0 0.5 1
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
2/3
|
PDF 파일 내의 페이지 : 총 4 페이지
제조업체: ROHM Semiconductor
( rohm )
RF051VA1S diode
데이터시트 다운로드 :
[ RF051VA1S.PDF ]
[ RF051VA1S 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
