DL-4038-025 반도체 회로 부품 판매점
High Power AlGaInP Laser Diode
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 Sanyo Semicon Device |
www.DataSheet4U.com
Ordering number : EN5902
DL-4038-025
Red Laser Diode
DL-4038-025
High Power AlGaInP Laser Diode
Overview
DL-4038-025 is a high power 635 nm (Typ.) AlGalnP laser diode.The
lasing wavelength is the same as He-Ne gas lasers. DL-4038-025 is
suitable for applications such as laser printers, line markers and other
optical information systems.
Features
• Short wavelength
• High output power
• Low threshold current
• Low operating voltage
: 635 nm (Typ.)
: 20mW CW
: Ith = 45 mA (Typ.)
: Vop = 2.3 V (Typ.)
Package Dimensions
0
ø9.0 – 0.03
Tolerance : ± 0.2
Unit : mm
ø5.35
ø4.75±0.15
ø2.1
Effective window diameter 1.0min.
13
2
Top view
1.0±0.1
LD facet
Absolute Maximum Ratings at Tc=25°C
Parameter
Symbol
Light Output CW Po
Reverse Voltage Laser
PIN
VR
Operating Temperature Topr
Storage Temperature
Tstg
Ratings
20
2
30
---10 to +40
---40 to +85
Unit
mW
V
°C
°C
ø1.4max.
3–ø0.45±0.1
Pin No. 1 2 3 ø2.54
9.0mm ø stem(Red)
Electrical Connection
13
LD PD
Electrical and Optical Characteristics at Tc=25°C
2
– power supply system
Parameter
Threshold Current
Operating Current
Operating Voltage
Lasing Wavelength
Beam 1) Perpendicular
Divergence Parallel
Off Axis
Perpendicular
Angle
Parallel
Differential Efficiency
Monitoring Output Current
Astigmatism
Symbol
Ith
Iop
Vop
λp
θ⊥
θ //
∆θ ⊥
∆θ //
dPo/dIop
Im
As
Condition Min. Typ. Max. Unit
CW --- 45 70 mA
Po=20mW
---
80 110 mA
Po=20mW
---
2.3 2.5
V
Po=20mW
---
635 645 nm
Po=20mW
20
25
35 deg.
Po=20mW
6
7 10 deg.
--- --- --- ±3 deg.
--- --- --- ±3 deg.
--- --- 0.6 --- mW/mA
Po=20mW
---
0.03
---
mA
Po=20mW
---
10
--- µm
1) Full angle at half maximum Note : The above product specification are subject to change without notice.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N2798 GI, (IM) No.5902 1/3
DL-4038-025
Characteristics
Output power vs. Forward current
25
25°C 40°C
20
15
Threshold current vs. Temperature
100
80
60
40
10
20
5
0
0 50 100 150
Forward current IF (mA)
10
0 10 20 30 40 50
Temperature Tc (°C)
Monitoring current vs. Output power
0.10
0.08
Tc=25°C
Vr(PD)=5V
0.06
0.04
0.02
0
0 5 10 15 20
0 ¤ ¤m m ¤m oW n ¤
Lasing wavelength vs. Temperature
645
Po=20mW
640
635
630
0
10 20 30
Temperature Tc (°C)
40
Beam divergence
1.0
Po=20mW
0.8 Tc=25°C
0.6 θ ⊥
0.4
θ //
0.2
0
-40 -30 -20 -10 0 10 20 30 40
Angle θ (deg.)
Lasing wavelength vs. Output power
Po=20mW
Tc=25°C
Po=10mW
Po=5mW
632 634 636 638 640 642
Lasing wavelength λp (nm)
No.5902 2/3
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제조업체: Sanyo Semicon Device
( sanyo )
DL-4038-025 diode
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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전력반도체 문의 : 010-3582-2743
관련 데이터시트
DL-4038-021
High Power AlGalnP Laser Diode - Sanyo Semicon Device
DL-4038-025
High Power AlGaInP Laser Diode - Sanyo Semicon Device