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BAV199T 반도체 회로 부품 판매점

(BAV1xxT) SURFACE MOUNT LOW LEAKAGE DIODE



Diodes Incorporated 로고
Diodes Incorporated
BAV199T 데이터시트, 핀배열, 회로
www.DataSheet4U.com
Features
· Ultra-Small Surface Mount Package
· Very Low Leakage Current
Mechanical Data
· Case: SOT-523, Molded Plastic
· Case material - UL Flammability Rating
Classification 94V-0
· Moisture sensitivity: Level 1 per J-STD-020A
· Terminals: Solderable per MIL-STD-202,
Method 208
· Polarity: See Diagrams Below
· Marking: See Diagrams Below & Page 3
· Weight: 0.002 grams (approx.)
· Ordering Information: See Page 3
BAS116T, BAW156T,
BAV170T, BAV199T
SURFACE MOUNT LOW LEAKAGE DIODE
SOT-523
A Dim Min Max Typ
C A 0.15 0.30 0.22
TOP VIEW B C
B 0.75 0.85 0.80
C 1.45 1.75 1.60
B
G
H
E
K
N
D ¾ ¾ 0.50
G 0.90 1.10 1.00
H 1.50 1.70 1.60
M J 0.00 0.10 0.05
J DL
K 0.60 0.80 0.75
L 0.10 0.30 0.22
M 0.10 0.20 0.12
N 0.45 0.65 0.50
a 0° 8° ¾
All Dimensions in mm
BAS116T Marking: 50
BAW156T Marking: 53
BAV170T Marking: 51
BAV199T Marking: 52
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Single Diode
Double Diode
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Surge Current @ t = 1.0ms
@ t = 1.0ms
@ t = 1.0s
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Symbol
VRRM
VRWM
VR
VR(RMS)
IFM
IFRM
IFSM
Pd
RqJA
Tj , TSTG
Value
85
60
215
125
500
4.0
1.0
0.5
150
833
-65 to +150
Notes: 1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at
http://www.diodes.com/datasheets/ap02001.pdf.
Unit
V
V
mA
mA
A
mW
°C/W
°C
DS30258 Rev. 5 - 2
DataSheet4 U .com
1 of 3
BAS116T, BAW156T, BAV170T, BAV199T


BAV199T 데이터시트, 핀배열, 회로
www.DataSheet4U.com
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 2)
Forward Voltage (Note 2)
Leakage Current (Note 2)
Total Capacitance
Reverse Recovery Time
Symbol Min Typ Max Unit
Test Condition
V(BR)R
85
¾
¾
V IR = 100mA
0.90
IF = 1.0mA
VF
¾
¾
1.0
1.1
V
IF = 10mA
IF = 50mA
1.25
IF = 150mA
IR
¾
¾
5.0
80
nA VR = 75V
nA VR = 75V, Tj = 150°C
CT ¾ 2 ¾ pF VR = 0, f = 1.0MHz
trr
¾
¾
3.0
ms
IF = IR = 10mA,
Irr = 0.1 x IR, RL = 100W
Notes: 2. Short duration test pulse used to minimize self-heating effect.
250
200
150
100
50
0
0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Derating Curve
10
VR = 75V
1
0.1
0
50
100 150
200
TA, AMBIENT TEMPERATURE (°C)
Fig. 3 Typical Reverse Characteristics
1000
100
10
1.0
0.1
0.01
0
12
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
160
140
120
100
80
60
40
IF = 1mA
IF = 10mA
IF = 150mA
IF = 50mA
20
0
0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40
VF(AVE), AVERAGE FORWARD VOLTAGE (V)
Fig. 4 Typical Forward Voltage vs Ambient Temperature
DS30258 Rev. 5 - 2
DataSheet4 U .com
2 of 3
BAS116T, BAW156T, BAV170T, BAV199T




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BAV199T diode

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