BAW101S 반도체 회로 부품 판매점
High voltage double diode
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 NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
MBD128
BAW101S
High voltage double diode
Product data sheet
2003 May 13
NXP Semiconductors
High voltage double diode
Product data sheet
BAW101S
FEATURES
• Small plastic SMD package
• High switching speed: max. 50 ns
• High continuous reverse voltage: 300 V
• Electrically insulated diodes.
APPLICATIONS
• High voltage switching
• Automotive
• Communication.
PINNING
PIN
1
2
3
4
5
6
DESCRIPTION
anode 1
n.c.
cathode 2
anode 2
n.c.
cathode 1
DESCRIPTION
The BAW101S is a high-speed switching diode array with
two separate dice, fabricated in planar technology and
encapsulated in a small SOT363 plastic SMD package.
handbook, halfpage
65
4
65 4
MARKING
TYPE NUMBER
BAW101S
MARKING CODE(1)
K2∗
Note
1. ∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
∗ = W: Made in China.
12
Top view
3
MBL892
123
Fig.1 Simplified outline (SOT363) and symbol.
2003 May 13
2
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BAW101S diode
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국내 전력반도체 판매점
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