2D150 반도체 회로 부품 판매점
DIODE MODULE
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USR Semiconductor Co., Ltd
DIODE
MODULE
2D150
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
VALUE
Tj(°C)
UNIT
Min Type Max
IO
VRRM
DC output current
Single-phase full wave rectifying
circuit, TC=100°C
150
Repetitive peak reverse voltage
VRRM tp=10ms
VRsM= VDRM&VRRM+200V
150
600
150
1800
A
V
IRRM Repetitive peak current
at VRRM
150 10 mA
IFSM
I2t
VFO
rF
VFM
Rth(j-c)
Viso
Fm
Tstg
Wt
Outline
Surge forward current
I2T for fusing coordination
Threshold voltage
10ms half sine wave
VR=0.6VRRM
Forward slop resistance
Peak forward voltage
Thermal resistance
Junction to heatsink
Isolation voltage
Terminal connection torque(M4)
IFM=225A
Single side cooled
50Hz,R.M.S,t=1min,I iso:1mA(max)
Mounting torque(M6)
Stored temperature
Weight
410F4
2.50 KA
150
31.8 A2s*103
0.80 V
150 3.8 mΩ
25 1. 655 V
2500
-40
1.5
3.0
430
0.150
125
°C /W
V
N·m
N·m
°C
g
OUTLINE DRAWING & CIRCUIT DIAGRAM
USR Semiconductor Co., Ltd
DIODE
MODULE
Peak forward Voltage VsM.PDeQa/kSfo1r5w0ard Current
3.5
3 Tj=150°C
2.5
2
1.5
1
0.5
10
100 1000
Instantaneous on-state currant,amperes
Fig.1
Max. Power Dissipation Vs.MMDeQa1n5fo0rward Current
600
500
400
300
200
100
0
0 50 100 150
Mean on-state current,amperes
Fig.3
200
Surge Curren2t .V5s0.Cycles
2.8
2.4
2
1.6
1.2
0.8
0.4
1
10
Cycles at 50Hz
Fig.5
100
Max. junction To case Therm0a.i1Im5pedance Vs.Time
0.15
0.12
0.09
0.06
0.03
0
0.001
0.01
0.1
time S
Fig.2
1
Max. case Temperature VsM.MDQe1an50forward Current
160
10
140
120
100
80
60
0
30 60 90 120 150
Mean on-state current,amperes
180
Fig.4
35
32
29
26
23
20
17
14
11
8
1
I2t31V.s8.Time
Time,m.seconds
Fig.6
10
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
