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TSAL5300 반도체 회로 부품 판매점

GaAs/GaAlAs IR Emitting Diode



Vishay Siliconix 로고
Vishay Siliconix
TSAL5300 데이터시트, 핀배열, 회로
TSAL5300
om Vishay Telefunken
t4U.c ¾GaAs/GaAlAs IR Emitting Diode in ø 5 mm (T–1 )
ePackage
SheDescription
taTSAL5300 is a high efficiency infrared emitting diode
ain GaAlAs on GaAs technology, molded in clear, blue-
.Dgrey tinted plastic packages.
wIn comparison with the standard GaAs on GaAs
technology these emitters achieve more than 100 %
ww radiant power improvement at a similar wavelength.
The forward voltages at low current and at high pulse
current roughly correspond to the low values of the
standard technology. Therefore these emitters are
mideally suitable as high performance replacements of
standard emitters.
.coFeatures
D Extra high radiant power and radiant intensity
UD Low forward voltage
t4D Suitable for high pulse current operation
D Standard T–1¾ (ø 5 mm) package
eD Angle of half intensity ϕ = ± 22°
eD Peak wavelength lp = 940 nm
D High reliability
hD Good spectral matching to Si photodetectors
taSApplications
Infrared remote control units with high power requirements
Free air transmission systems
aInfrared source for optical counters and card readers
IR source for smoke detectors
96 11505
.DAbsolute Maximum Ratings
wTamb = 25_C
wParameter
Reverse Voltage
wForward Current
Peak Forward Current
omSurge Forward Current
.cPower Dissipation
UJunction Temperature
t4Operating Temperature Range
eStorage Temperature Range
eSoldering Temperature
hThermal Resistance Junction/Ambient
Test Conditions
tp/T = 0.5, tp = 100 m s
tp = 100 m s
xt 5sec, 2 mm from case
Symbol
VR
IF
IFM
IFSM
PV
Tj
Tamb
Tstg
Tsd
RthJA
Value
5
100
200
1,5
210
100
–55...+100
–55...+100
260
350
Unit
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
ataSDocument Number 81008
www.DRev. 4, 20-May-99
www.vishay.de FaxBack +1-408-970-5600
1 (5)


TSAL5300 데이터시트, 핀배열, 회로
TSAL5300
Vishay Telefunken
Basic Characteristics
Tamb = 25_ C
Parameter
Forward Voltage
Temp. Coefficient of VF
Reverse Current
Junction Capacitance
Radiant Intensity
Radiant Power
Temp. Coefficient of f e
Angle of Half Intensity
Peak Wavelength
Spectral Bandwidth
Temp. Coefficient of lp
Rise Time
Fall Time
Virtual Source Diameter
Test Conditions
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 m s
IF = 100 mA
VR = 5 V
VR = 0, f = 1 MHz, E = 0
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 m s
IF = 100 mA, tp = 20 ms
IF = 20 mA
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 1 A
IF = 100 mA
IF = 1 A
method: 63% encircled
energy
Symbol
VF
VF
TKVF
IR
Cj
Ie
Ie
fe
TKf e
ϕ
lp
Dl
TKl p
tr
tr
tf
tf
ø
Min
30
260
Typ
1.35
2.6
–1.875
25
45
350
35
–0.6
±22
940
50
0.2
800
500
800
500
2.1
Max Unit
1.6 V
3V
mV/K
10 m A
pF
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
ns
ns
mm
Typical Characteristics (Tamb = 25_ C unless otherwise specified)
250 250
200 200
150 150
RthJA
100 100
RthJA
50 50
0
0
94 7957 e
20 40 60 80 100
Tamb – Ambient Temperature ( °C )
Figure 1. Power Dissipation vs. Ambient Temperature
0
0
96 11986
20 40 60 80 100
Tamb – Ambient Temperature ( °C )
Figure 2. Forward Current vs. Ambient Temperature
www.vishay.de FaxBack +1-408-970-5600
2 (5)
Document Number 81008
Rev. 4, 20-May-99




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