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TSAL6100 반도체 회로 부품 판매점

High Power Infrared Emitting Diode



Vishay Siliconix 로고
Vishay Siliconix
TSAL6100 데이터시트, 핀배열, 회로
www.vishay.com
TSAL6100
Vishay Semiconductors
High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW
94 8389
DESCRIPTION
TSAL6100 is an infrared, 940 nm emitting diode in GaAlAs
multi quantum well (MQW) technology with high radiant
power and high speed molded in a blue-gray plastic
package.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Peak wavelength: λp = 940 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 10°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Infrared remote control units with high power reqirements
• Free air transmission systems
• Infrared source for optical counters and card readers
• IR source for smoke detectors
PRODUCT SUMMARY
COMPONENT
TSAL6100
Ie (mW/sr)
170
Note
• Test conditions see table “Basic Characteristics”
ϕ (deg)
± 10
λp (nm)
940
ORDERING INFORMATION
ORDERING CODE
TSAL6100
Note
• MOQ: minimum order quantity
PACKAGING
Bulk
REMARKS
MOQ: 4000 pcs, 4000 pcs/bulk
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
tp/T = 0.5, tp = 100 μs
tp = 100 μs
t 5 s, 2 mm from case
J-STD-051, leads 7 mm soldered on PCB
VR
IF
IFM
IFSM
PV
Tj
Tamb
Tstg
Tsd
RthJA
tr (ns)
15
PACKAGE FORM
T-1¾
VALUE
5
100
200
1.5
160
100
-40 to +85
-40 to +100
260
230
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
Rev. 1.8, 13-Mar-14
1 Document Number: 81009
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


TSAL6100 데이터시트, 핀배열, 회로
www.vishay.com
TSAL6100
Vishay Semiconductors
180
160
140
120
100
80 RthJA = 230 K/W
60
40
20
0
0
21211
10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
120
100
80
RthJA = 230 K/W
60
40
20
0
0
21212
10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (°C)
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
Forward voltage
Temperature coefficient of VF
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 μs
IF = 1 mA
VF
VF
TKVF
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of φe
Angle of half intensity
VR = 5 V
VR = 0 V, f = 1 MHz, E = 0
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 μs
IF = 100 mA, tp = 20 ms
IF = 20 mA
IR
Cj
Ie
Ie
φe
TKφe
ϕ
80
650
Peak wavelength
Spectral bandwidth
Temperature coefficient of λp
Rise time
Fall time
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 100 mA
λp
Δλ
TKλp
tr
tf
TYP.
1.35
2.2
-1.8
40
170
1450
40
-0.6
± 10
940
30
0.2
15
15
MAX.
1.6
3
10
400
UNIT
V
V
mV/K
μA
pF
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
Rev. 1.8, 13-Mar-14
2 Document Number: 81009
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




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