(PDF) DL100-7-KER Datasheet - Position Sensing Photodiodes Special characteristics

Número de pieza	DL100-7-KER
Descripción	Position Sensing Photodiodes Special characteristics
Fabricantes	Silicon Sensor
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No Preview Available ! DL-100-7-KER pin Position Sensing Photodiodes Special characteristics: dual-axis, duo-lateral PSD active area 10 x 10 mm high position resolution and high linearity Parameters: active area Dark current at 10 V Capacitance at 10 V, 100 kHz Spectral responsivity at 633 nm at 850 nm Interelectrode resistance at E = 0 lx Rise time at 10 V, 50 Ω, 865 nm Noise limited resolution at 632 nm, 0.5 µW Position Detection Error 1) at 632 nm Breakdown voltage Package Operating temperature Storage temperature 1) measurement conditions: Spot size: 0,5 mm, Scan Interval: 1 mm Wavelength: 633 nm DL-100-7-KER pin 10 x 10 mm 100 mm2 max. 300 nA typ. 80 nA typ. 75 pF typ. 0,4 A/W typ. 0,62 A/W typ. 12 kΩ typ. 4 µs 0.2 µm +/- 1% typ. 30 V Ceramic with pins -20 ... +70°C -60 ... +100°C Package 21 (SMD with pins) 10.16 15.24 0.45 ANODE 1 CATHODE 2 Chip: DL-100-7 Active area: (10 x 10) mm2 CATHODE 1 ANODE 2 21.0 ± 0.2 www.silicon-sensor.com Version: 02-09-06 www.pacific-sensor.com 1 page

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PDF DL100-7-KER Data sheet ( Hoja de datos )