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ROHM Semiconductor |
Diodes
Fast recovery Diode
RF103L2S
RF103L2S
!Applications
High frequency rectification
!Features
1) Small power mold type (PMDS)
2) Ultra low VF
3) Very fast recovery
4) Low switching loss
!Construction
Silicon epitaxial planar
!External dimensions (Unit : mm)
1.5±0.2
CATHODE MARK
12
34
2.6±0.2
0.1
+0.02
−0.1
2.0±0.2
∗ 1 , 2 ···Type No.
3 , 4 ···Manufacturing date
EX. RF101L2S
EX. 2003,09
→
→
6,6
3,9
!Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Reverse voltage (repetitive peak)
VRM
Reverse voltage (DC)
Average rectified forward current ∗
VR
IO
Forward Peak surge current (60Hz 1cyc.) IFSM
Junction temperature
Tj
Storage temperature
Tstg
∗ Mounting on glass epoxi board
Limits
200
200
1.0
20
150
−40 to +150
Unit
V
V
A
A
°C
°C
!Electrical characteristics (Ta=25°C)
Parameter
Forward voltage
Reverse current
Symbol
VF
IR
Reverse recovery time
trr
Typ.
0.860
1.2
9
Max.
0.920
10
20
Unit Conditions
V IF=1.0A
µA VR=200V
IF=0.5A
nS IR=1.0A
Irr=0.25 IR
1/2
Diodes
!Electrical characteristic curves (Ta=25°C)
1 1000
125°C
0.1
125°C
0.01
75°C
25°C
−25°C
0.001
0
0.2 0.4 0.6 0.8
FORWARD VOLTAGE : VF (V)
1
Fig.1 Forward temperature
characteristics
100
75°C
10
1 25°C
0.1
−25°C
0.01
0
50 100 150
REVERSE VOLTAGE : VR (V)
200
Fig.2 Reverse temperature
characteristics
RF103L2S
2.0
1.8
1.6 DC
1.4
1.2 D=1/2
0A
0V
t
T
IO
VR
D=t / T
VR=200V
Tj=150°C
1.0
Sin(θ=180)
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE : Ta (°C)
Fig.3 Derating curve
1.4
1.2
1.0 DC
D=1/2
0.8
Sin(θ=180)
0.6
0.4
0.2
0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
AVERAGE RECTIFIED FORWARD CURRENT : IO (A)
Fig. 4 Power dissipation
characteristics
25 100
sin wave
20
8.3ms 8.3ms
1cycle
15
10
10
5
0
1 10 100
CYCLE
Fig.5 Powerd peak surge current
0
0 5 10 15 20 25 30
REVERSE VOLTAGE : VR (V)
Fig. 6 Capacirance between terminals
characteristics
2/2
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