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IDB31 반도체 회로 부품 판매점

PLANAR SILICON BIDIRECTIONAL TRIGGER DIODE



General Semiconductor 로고
General Semiconductor
IDB31 데이터시트, 핀배열, 회로
NEW PRODUCT
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NEW PRODUCT
IDB31
PLANAR SILICON BIDIRECTIONAL TRIGGER DIODE
SOT-23
.122 (3.1)
.118 (3.0)
.016 (0.4)
3
Top View
12
.037(0.95) .037(0.95)
FEATURES
¨ Intend for use in triac and thyristors circuits
¨ VBO: 30V to 34V
¨ Excellent Breakover Voltage
Symmetry: typ. 1%
¨ Low Breakover Current: 20µA typ.
¨ Marking: B31
¨ Bidirectional Operation:
Pin 2 and 3 connected to the circuit
Pin 1 has to stay open
.016 (0.4) .016 (0.4)
.102 (2.6)
.094 (2.4)
1
Top View
23
Dimensions in inches and (millimeters)
IMPORTANT
Do not connect Pin 1 to ground, VCC or any signal lines.
Pin 1 has to be soldered at a solderpad without any further
lines
MECHANICAL DATA
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
Marking code: B31
MAXIMUM RATINGS
In accordance with the Absolut Maximum Rating System (IEC 134).
Power dissipation
Repetitive peak on-state current
tp=20µs, f=100Hz
Operating junction temperature range
at tp < 1 s, Tamb = 25 ¡C
Storage temperature range
Thermal resistance junction to ambient air
SYMBOL
Ptot
ITRM
TJ
TS
RthA
VALUE
150 (NOTE 1)
2
-40 to +125
-40 to +125
400 (NOTE 1)
UNIT
mW
Amps
¡C
¡C
¡C/W
NOTES:
(1) Device on fiberglass substrate, see layout in Fig. 4
1/15/99


IDB31 데이터시트, 핀배열, 회로
ELECTRICAL CHARACTERISTICS
at Tj = 25 ¡C, unless otherwise specified; electrical characteristics applicable in both, forward and reverse direction
Breakover Voltage
see Fig. 1
Breakover Voltage Symmetry
see Fig. 1
Dynamic Breakback Voltage
(IBO to IF=10mA), see Fig. 1
Output Voltage
see Fig. 2
Breakover Current
see Fig. 1
Rise time
see Fig. 3
Leakage current
VB=0,5·VBO max.
see Fig. 1
SYMBOL
VBO
½VBO1½-½VBO2½
½DV½
VO
IBO
tr
IB
MIN.
30
-
5
5
4
-
-
TYP.
32
-
8
-
20
100
-
MAX.
34
±2
-
-
50
-
0.5
UNIT
Volts
Volts
Volts
Volts
mA
ns
mA
FIG. 1 - CURRENT-VOLTAGE CHARACTERISTICS
+IF
10mA
-V
VBO1
IBO
IB
0.5 VBO
DV
+V
VBO2
-IF




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IDB31 diode

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