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Datasheet 495025 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
495 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 4953 | Dual 30V P-Channel PowerTrench MOSFET Shenzhen Tuofeng Semiconductor Technology 4Co9.,5L3td
4953
Dual 30V P-Channel PowerTrench® MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wid  Tuofeng Semiconductor mosfet | | |
| 2 | 4953A | Dual 30V P-Channel PowerTrench MOSFET Shenzhen Tuofeng Semiconductor Technology 4Co9.,5L3tdA
4953A
Dual 30V P-Channel PowerTrench® MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a w Tuofeng Semiconductor mosfet | | |
| 3 | 4953B | Dual 20V P-Channel PowerTrench MOSFET Shenzhen Tuofeng Semiconductor Technology 4Co9.,5L3tdB
4953B
Dual 20V P-Channel PowerTrench® MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a w Tuofeng Semiconductor mosfet | | |
| 4 | 4953GM | AP4953GM
AP4953GM
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching
D1 G2 S2 D2 D1 D2
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-30V 53mΩ -5A
SO-8
S1
G1
Description
Advanced Power MOSFETs fr  Advanced Power Electronics data | | |
| 5 | 4957AGM | AP4957AGM AP4957AGM
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Low On-Resistance ▼ Simple Drive Requirement
D1 D2 D1 D2
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
G2 S2
-30V 26mΩ -7.4A
▼ Dual P MOSFET Package
SO-8
S1 G1
Description
Advanced Power MOSFETs from APEC pro Advanced Power Electronics data | | |
| 6 | 495PT | Phase Control Thyristors SEMICONDUCTOR
42.0(1.65)DIA. MAX.
l
B TYPE
20
3.5(0.138) DIA.
25.0(0.98) DIA. Max. 15.01(0.59) Max.
All dimensions in millimeters ( inches )
SEMICONDUCTOR
495PT Series RRooHHSS
www.nellsemi.com
Page 2 of 3
SEMICONDUCTOR
495PT Series RRooHHSS
31.25 2.5
μ
，
www.nellsemi.com
Page 3 o  nELL thyristor | |
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