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Infineon Technologies AG |
Silicon Tuning Diode
• High Q hyperabrupt tuning diode
• Very low capacitance spread
• Designed for low tuning voltage operation
for VCO's in mobile communications equipment
• For low frequency control elements
such as TCXOS and VCXOS
• High capacitance ratio and good C-V linearity
• Pb-free (RoHS compliant) package
BBY65...
BBY65-02V
Type
BBY65-02V
Package
SC79
Configuration
single
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Forward current
Operating temperature range
Storage temperature
VR
IF
Top
Tstg
LS(nH) Marking
0.6 F
Value
15
50
-55 ... 150
-55 ... 150
Unit
V
mA
°C
1 2011-06-15
BBY65...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Reverse current
VR = 10 V
VR = 10 V, TA = 85 °C
IR
- - 10
- - 100
AC Characteristics
Diode capacitance
VR = 0.3 V, f = 1 MHz
VR = 1 V, f = 1 MHz
VR = 2 V, f = 1 MHz
VR = 3 V, f = 1 MHz
VR = 4.7 V, f = 1 MHz
CT
28.2 29.5 30.8
- 20.25 -
- 9.8 -
- 4.45 -
2.6 2.7 2.8
Capacitance ratio
VR = 0.3 V, VR = 4.7 V
Capacitance ratio
VR = 1 V, VR = 3 V
Series resistance
VR = 1 V, f = 470 MHz
CT0.3/
CT4.7
CT1/CT3
rS
10 10.9 -
- 4.55 -
- 0.6 0.9
Unit
nA
pF
pF
pF
Ω
2 2011-06-15
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