파트넘버.co.kr BBY58 데이터시트 PDF


BBY58 반도체 회로 부품 판매점

Silicon Tuning Diodes



Infineon Technologies AG 로고
Infineon Technologies AG
BBY58 데이터시트, 핀배열, 회로
BBY58...
Silicon Tuning Diodes
Excellent linearity
High Q hyperabrupt tuning diode
Low series resistance
Designed for low tuning voltage operation
for VCO's in mobile communications equipment
For low frequency control elements
such as TCXOs and VCXOs
Very low capacitance spread
BBY58-02L/V
BBY58-02W
BBY58-03W
BBY58-05W
BBY58-06W
BBY58-07L4
12
3
D1 D2
12
3
D1 D2
12
4
D1
1
3
D2
2
Type
BBY58-02L*
BBY58-02V
BBY58-02W
BBY58-03W
BBY58-05W
BBY58-06W
BBY58-07L4*
*Preliminary
Package
TSLP-2-1
SC79
SCD80
SOD323
SOT323
SOT323
TSLP-4-4
Configuration
single, leadless
single
single
single
common cathode
common anode
parallel pair, leadless
LS(nH) Marking
0.4 88
0.6 8
0.6 88
0.6 8 yel.
1.4 B5s
1.4 B6s
0.4 B8
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Forward current
Operating temperature range
Storage temperature
VR
IF
Top
Tstg
Value
10
20
-55 ... 150
-55 ... 150
Unit
V
mA
°C
1 Jul-25-2003


BBY58 데이터시트, 핀배열, 회로
BBY58...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Reverse current
VR = 8 V
VR = 8 V, TA = 85 °C
IR
- - 10
- - 100
Unit
nA
AC Characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 2 V, f = 1 MHz
VR = 3 V, f = 1 MHz
VR = 4 V, f = 1 MHz
VR = 6 V, f = 1 MHz
Capacitance ratio
VR = 1 V, VR = 3 V, f = 1 MHz
Capacitance ratio
VR = 1 V, VR = 4 V, f = 1 MHz
Capacitance ratio
VR = 4 V, VR = 6 V, f = 1 MHz
Series resistance
VR = 1 V, f = 470 MHz, BBY58-02L, -07L4
VR = 1 V, f = 470 MHz, all other
CT pF
17.5 18.3 19.3
11.4 12.35 13.3
7.8 8.6 9.3
5.5 6 6.6
3.8 4.7 5.5
CT1/CT3 1.9 2.15 2.4 -
CT1/CT4 2.7 3.05 3.5
CT4/CT6 1.15 1.3 1.45
rS
- 0.3 -
- 0.25 -
2 Jul-25-2003




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제조업체: Infineon Technologies AG

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BBY58 diode

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