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Infineon Technologies AG |
BBY58...
Silicon Tuning Diodes
• Excellent linearity
• High Q hyperabrupt tuning diode
• Low series resistance
• Designed for low tuning voltage operation
for VCO's in mobile communications equipment
• For low frequency control elements
such as TCXOs and VCXOs
• Very low capacitance spread
BBY58-02L/V
BBY58-02W
BBY58-03W
BBY58-05W
BBY58-06W
BBY58-07L4
12
3
D1 D2
12
3
D1 D2
12
4
D1
1
3
D2
2
Type
BBY58-02L*
BBY58-02V
BBY58-02W
BBY58-03W
BBY58-05W
BBY58-06W
BBY58-07L4*
*Preliminary
Package
TSLP-2-1
SC79
SCD80
SOD323
SOT323
SOT323
TSLP-4-4
Configuration
single, leadless
single
single
single
common cathode
common anode
parallel pair, leadless
LS(nH) Marking
0.4 88
0.6 8
0.6 88
0.6 8 yel.
1.4 B5s
1.4 B6s
0.4 B8
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Forward current
Operating temperature range
Storage temperature
VR
IF
Top
Tstg
Value
10
20
-55 ... 150
-55 ... 150
Unit
V
mA
°C
1 Jul-25-2003
BBY58...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Reverse current
VR = 8 V
VR = 8 V, TA = 85 °C
IR
- - 10
- - 100
Unit
nA
AC Characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 2 V, f = 1 MHz
VR = 3 V, f = 1 MHz
VR = 4 V, f = 1 MHz
VR = 6 V, f = 1 MHz
Capacitance ratio
VR = 1 V, VR = 3 V, f = 1 MHz
Capacitance ratio
VR = 1 V, VR = 4 V, f = 1 MHz
Capacitance ratio
VR = 4 V, VR = 6 V, f = 1 MHz
Series resistance
VR = 1 V, f = 470 MHz, BBY58-02L, -07L4
VR = 1 V, f = 470 MHz, all other
CT pF
17.5 18.3 19.3
11.4 12.35 13.3
7.8 8.6 9.3
5.5 6 6.6
3.8 4.7 5.5
CT1/CT3 1.9 2.15 2.4 -
CT1/CT4 2.7 3.05 3.5
CT4/CT6 1.15 1.3 1.45
rS Ω
- 0.3 -
- 0.25 -
2 Jul-25-2003
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