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Infineon Technologies AG |
BBY57...
Silicon Tuning Diode
Excellent linearity
High Q hyperabrupt tuning diode
Low series resistance
High capacitance ratio
Designed for low tuning voltage operation
for VCO's in mobile communications equipment
For control elements such as TCXOs and VCXOs
BBY57-02L
BBY57-02V
BBY57-02W
BBY57-05W
3
1 2 D1 D2
12
Type
BBY57-02L*
BBY57-02V
BBY57-02W
BBY57-05W
* Preliminary
Package
TSLP-2
SC79
SCD80
SOT323
Configuration
single
single
single
common cathode
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Forward current
Operating temperature range
Storage temperature
VR
IF
Top
Tstg
LS(nH) Marking
0.4 55
0.6 5
0.6 55
1.4 D5s
Value
10
20
-55 ... 125
-55 ... 150
Unit
V
mA
°C
1 Mar-19-2003
BBY57...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Reverse current
VR = 8 V
VR = 8 V, TA = 85 °C
IR nA
- - 10
- - 100
AC Characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 2.5 V, f = 1 MHz
VR = 3 V, f = 1 MHz
VR = 4 V, f = 1 MHz
Capacitance ratio
VR = 1 V, VR = 3 V, f = 1 MHz
Capacitance ratio
VR = 1 V, VR = 4 V, f = 1 MHz
Series resistance
VR = 1 V, f = 470 MHz, BBY57-02L
VR = 1 V, f = 470 MHz, all others
CT
CT1/CT3
16.5
-
-
3.5
-
17.5
9.35
7
4.7
2.45
18.6
-
-
5.5
-
pF
CT1/CT4
3
3.7 4.5
rS
- 0.35 -
- 0.3 -
2 Mar-19-2003
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