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Siemens Group |
Silicon Tuning Diode
Preliminary data
• Excellent linearity
• High Q hyperabrupt tuning diode
• Low series inductance
• Designed for low tuning voltage operation
for VCO’s in mobile communications equipment
• Very low capacitance spread
BBY 56-02W
2
1 VES05991
Type
BBY 56-02W
Marking
6
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Operating temperature range
Storage temperature
Ordering Code
Q62702-
Pin Configuration
1=C
2=A
Package
SCD-80
Symbol
VR
IF
Top
Tstg
Value
10
20
-55 ...+150
-55 ...+150
Unit
V
mA
°C
SSeemmicioconndduuctcotor rGGrorouupp
11
Au 1-19948-1-1919-081
BBY 56-02W
Electrical Characteristics at TA = 25 °C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Reverse current
VR = 8 V
Reverse current
VR = 8 V, TA = 65 °C
IR - - 1 nA
IR - - 100 µA
AC characteristics
Diode capacitance
VR = 0.32 V, f = 1 MHz
VR = 1 V, f = 1 MHz
VR = 2 V, f = 1 MHz
VR = 2.38 V, f = 1 MHz
VR = 3 , f = 1 MHz
CT pF
59 - 67
39 - 43
22 - 27.2
19.4 - 23.7
15.9 -
19
Capacitance ratio
VR = 1 V, VR = 3 V, f = 1 MHz
Series resistance
VR = 1 V, f = 330 MHz
Case capacitance
f = 1 MHz
Series inductance chip to ground
CT1/CT3 - 2.45 - -
rs - 0.3 - Ω
CC - 0.09 - pF
Ls - 0.6 - nH
SSeemmicioconndduuctcotor rGGrorouupp
22
Au 1-19948-1-1919-081
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