BBY53 반도체 회로 부품 판매점
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation)
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 Siemens Group |
Silicon Tuning Diode
Preliminary data
• High Q hyperabrupt tuning diode
• Designed for low tuning voltage operation
for VCO's in mobile communications equipment
• High ratio at low reverse voltage
BBY 53
Type
BBY 53
Marking Ordering Code Pin Configuration
Package
S7s Q62702-B824 1 = A1 2 = A2 3 = C1/C2 SOT-23
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Operating temperature range
Storage temperature
Symbol
VR
IF
Top
Tstg
Values
6
20
- 55 ... + 150
- 55 ... + 150
Unit
V
mA
°C
Semiconductor Group
1
Feb-04-1997
BBY 53
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
max.
DC characteristics
Reverse current
VR = 4 V, TA = 25 °C
VR = 4 V, TA = 65 °C
IR
-
-
-
-
10
200
Unit
nA
AC characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 3 V, f = 1 MHz
Capacitance ratio
VR = 1 V, VR = 3 V, f = 1 MHz
Series resistance
VR = 1 V, f = 1 GHz
Case capacitance
f = 1 MHz
Series inductance chip to ground
CT
CT1/CT3
rs
CC
Ls
4.8
1.85
1.8
-
-
-
5.3 5.8
2.4 3.1
2.2 2.6
0.37 -
0.12
2
-
-
pF
-
Ω
pF
nH
Semiconductor Group
2
Feb-04-1997
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PDF 파일 내의 페이지 : 총 3 페이지
제조업체: Siemens Group
( siemens )
BBY53 diode
데이터시트 다운로드 :
[ BBY53.PDF ]
[ BBY53 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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