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Infineon Technologies AG |
Silicon Tuning Diode
• High Q hyperabrupt tuning diode
• Designed for low tuning voltage operation
• For VCO's in mobile communications equipment
• Pb-free (RoHS compliant) package
BBY51...
BBY51-02L
BBY51-02V
BBY51-02W
BBY51-03W
BBY51
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Type
BBY51
BBY51-02L
BBY51-02V
BBY51-02W*
BBY51-03W
* Not for new design
Package
SOT23
TSLP-2-1
SC79
SCD80
SOD323
Configuration
common cathode
single, leadless
single
single
single
Marking
S3s
II
f
II
white H
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Forward current
Operating temperature range
Storage temperature
VR
IF
Top
Tstg
Value
7
20
-55 ...125
-55 ...150
Unit
V
mA
°C
1 2014-02-11
BBY51...
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Unit
Reverse current
VR = 6 V
VR = 6 V, TA = 85 °C
IR nA
- - 10
- - 200
AC Characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 2 V, f = 1 MHz
VR = 3 V, f = 1 MHz
VR = 4 V, f = 1 MHz
CT pF
5.05 5.4 5.75
3.4 4.2 5.2
2.7 3.5 4.6
2.5 3.1 3.7
Capacitance ratio
VR = 1 V, VR = 4 V, f = 1 MHz
Capacitance difference
VR = 1 V, VR = 3 V, f = 1 MHZ
Capacitance difference
VR = 3 V, VR = 4 V, f = 1 MHZ
CT1/CT4 1.55 1.75 2.2
C1V-C3V 1.4 1.78 2.2 pF
C3V-C4V 0.3 0.5 0.7
Series resistance
VR = 1 V, f = 1 GHz
rS - 0.37 - Ω
2 2014-02-11
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