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Infineon Technologies AG |
Silicon Tuning Diode
• For SAT tuners
• High capacitance ratio
• Low series resistance
• Excellent uniformity and matching due to
"in-line" matching assembly procedure
• Pb-free (RoHS compliant) package
BB837/BB857...
BB837
BB857
BB857-02V
Type
BB837
BB857*
BB857-02V
* Not for new design
Package
SOD323
SCD80
SC79
Configuration
single
single
single
Marking
white M
OO
P
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Peak reverse voltage
R ≥ 5kΩ
VR
VRM
Forward current
Operating temperature range
Storage temperature
IF
Top
TStg
Value
30
35
20
-55 ...150
-55 ...150
Unit
V
mA
°C
1 2014-03-31
BB837/BB857...
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Reverse current
VR = 30 V
VR = 30 V, TA = 85 °C
IR
- - 10
- - 200
AC Characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 25 V, f = 1 MHz
VR = 28 V, f = 1 MHz
CT
6 6.6 7.2
0.5 0.55 0.65
0.45 0.52 -
Capacitance ratio
VR = 1 V, VR = 25 V, f = 1 MHz
Capacitance ratio
VR = 1 V, VR = 28 V, f = 1 MHz
Capacitance matching1)
VR = 1V ... 28V, f = 1 MHz, 7 diodes sequence
CT1/CT25 10.2
CT1/CT28 9.7
∆CT/CT
-
12
12.7
-
-
-
5
Series resistance
VR = 5 V, f = 470 MHz
rS - 1.5 -
1For details please refer to Application Note 047
Unit
nA
pF
-
%
Ω
2 2014-03-31
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