|
Infineon Technologies AG |
Silicon Variable Capacitance Diode
For FM tuners
Monolithic chip with common cathode
for perfect tracking of both diodes
Uniform "square law" characteristics
Ideal HiFi tuning device when used in
low-distortion, back-to-back configuration
BB804...
BB804
3
D1 D2
12
Type
BB804
Package
SOT23
Configuration
common cathode
*For differences see next page Capacitance groups
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Peak reverse voltage
Forward current
Operating temperature range
Storage temperature
VR
VRM
IF
Top
Tstg
LS(nH) Marking
1.8 SF1/2/3*
Value
18
20
50
-55 ... 125
-55 ... 150
Unit
V
mA
°C
1 Nov-07-2002
BB804...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Reverse current
VR = 16 V
VR = 16 V, TA = 65 °C
IR - -
nA
- - 20
200
AC Characteristics
Diode capacitance1)
VR = 2 V, f = 1 MHz
Capacitance ratio
VR = 2 V, VR = 8 V, f = 1 MHz
Series resistance
VR = 2 V, f = 100 MHz
Figure of merit
f = 100 MHz, VR = 2 V
Temperature coefficient of diode capacitance
VR = 2 V, f = 1 MHz
CT 42 - 47.5 pF
CT2/CT8 1.65 1.71
rS - 0.18
-
-
Q - 200 -
TCC
- 330 - ppm/K
1 Capacitance groups at 2V , coded 1; 2 ; 3
CT/groups
12
3
C2V min
43pF 44pF
45pF
C2V max
44.5pF 45.5pF 46.5pF
The capacitance subgroup is marked by the subgroup number printed on the component and the package
label. A packing unit (e.g. 8mm tape) contain diodes of one subgroup only. Delivery of different
capacitance subgroups requires a special agreement.
2 Nov-07-2002
|