파트넘버.co.kr BB804 데이터시트 PDF


BB804 반도체 회로 부품 판매점

Silicon Variable Capacitance Diode



Infineon Technologies AG 로고
Infineon Technologies AG
BB804 데이터시트, 핀배열, 회로
Silicon Variable Capacitance Diode
 For FM tuners
 Monolithic chip with common cathode
for perfect tracking of both diodes
 Uniform "square law" characteristics
 Ideal HiFi tuning device when used in
low-distortion, back-to-back configuration
BB804...
BB804
3
D1 D2
12
Type
BB804
Package
SOT23
Configuration
common cathode
*For differences see next page Capacitance groups
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Peak reverse voltage
Forward current
Operating temperature range
Storage temperature
VR
VRM
IF
Top
Tstg
LS(nH) Marking
1.8 SF1/2/3*
Value
18
20
50
-55 ... 125
-55 ... 150
Unit
V
mA
°C
1 Nov-07-2002


BB804 데이터시트, 핀배열, 회로
BB804...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Reverse current
VR = 16 V
VR = 16 V, TA = 65 °C
IR - -
nA
- - 20
200
AC Characteristics
Diode capacitance1)
VR = 2 V, f = 1 MHz
Capacitance ratio
VR = 2 V, VR = 8 V, f = 1 MHz
Series resistance
VR = 2 V, f = 100 MHz
Figure of merit
f = 100 MHz, VR = 2 V
Temperature coefficient of diode capacitance
VR = 2 V, f = 1 MHz
CT 42 - 47.5 pF
CT2/CT8 1.65 1.71
rS - 0.18
-
-
Q - 200 -
TCC
- 330 - ppm/K
1 Capacitance groups at 2V , coded 1; 2 ; 3
CT/groups
12
3
C2V min
43pF 44pF
45pF
C2V max
44.5pF 45.5pF 46.5pF
The capacitance subgroup is marked by the subgroup number printed on the component and the package
label. A packing unit (e.g. 8mm tape) contain diodes of one subgroup only. Delivery of different
capacitance subgroups requires a special agreement.
2 Nov-07-2002




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BB804 diode

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