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Infineon Technologies AG |
BB639C/BB659C...
Silicon Variable Capacitance Diode
For tuning of extended frequency band
in VHF TV / VTR tuners
High capacitance ratio
Low series inductance
Low series resistance
Excellent uniformity and matching due to
"in-line" matching assembly procedure
BB639C
BB659C/-02V
12
Type
BB639C
BB659C
BB659C-02V
Package
SOD323
SCD80
SC79
Configuration
single
single
single
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Peak reverse voltage
( R 5k )
VR
VRM
Forward current
Operating temperature range
Storage temperature
IF
Top
Tstg
LS (nH) Marking
1.8 yellow S
0.6 HH
0.6 H
Value
30
35
20
-55 ... 150
-55 ... 150
Unit
V
mA
°C
1 Nov-07-2002
BB639C/BB659C...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Reverse current
VR = 30 V
VR = 30 V, TA = 85 °C
IR nA
- - 10
- - 200
AC Characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 2 V, f = 1 MHz
VR = 25 V, f = 1 MHz
VR = 28 V, f = 1 MHz
Capacitance ratio
VR = 1 V, VR = 28 V, f = 1 MHz
Capacitance ratio
VR = 2 V, VR = 25 V, f = 1 MHz
Capacitance matching1)
VR = 1V to 28V, f = 1 MHz, 7 diodes sequence,
BB639C
VR = 1V to 28V , f = 1 MHz, 4 diodes sequence,
BB659C/-02V
VR = 1V to 28V, f = 1 MHz, 7 diodes sequence ,
BB659C/-02V
CT
CT1/CT28
CT2/CT25
CT/CT
36.5
27
2.5
2.4
14.2
9.5
-
-
-
39
30.2
2.72
2.55
15.3
11.1
-
0.3
0.5
42
33.2
3.05
2.75
-
pF
-
%
2.5
1
2
Series resistance
VR = 5 V, f = 470 MHz
1For details please refer to Application Note 047
rS
- 0.6 0.7
2 Nov-07-2002
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