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Siemens Group |
Silicon Variable Capacitance Diode
q For VHF Hyperband TV/TR tuners
q High capacitance ratio
q Low series resistance
BB 641
1
2
Type
BB 641
Ordering Code
(tape and reel)
Q62702-B792
Maximum Ratings
Parameter
Reverse voltage
Reverse voltage (R ≥ 5 kΩ)
Forward current
Operating temperature range
Storage temperature range
Thermal Resistance
Junction-ambient
Pin Configuration Marking
12
C A red G
Symbol
VR
VRM
IF
Top
Tstg
Values
30
35
20
– 55 … + 150
– 55 … + 150
Rth JA
≤ 450
Package
SOD-323
Unit
V
V
mA
°C
°C
K/W
Semiconductor Group
1
05 95
BB 641
Electrical Characteristics
at TA = 25 °C, unless otherwise specified.
Parameter
Symbol
DC Characteristics
Reverse current
VR = 30 V
VR = 30 V, TA = 85 °C
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 28 V, f = 1 MHz
Capacitance ratio
VR = 1 V, 28 V, f = 1 MHz
Capacitance matching
VR = 1 V … 28 V, f = 1 MHz
Series resistance
CT = 30 pF, f = 100 MHz
Series inductance
IR
CT
CT1/CT28
∆CT/CT
rS
Ls
min.
–
–
62
2.65
22
–
–
–
Value
typ. max.
Unit
– 20
– 200
69 76
2.88 3.1
24 –
– 2.5
1.55 –
1.8 –
nA
pF
–
%
Ω
nH
Package Outline
SOD-323
Dimensions in mm
Semiconductor Group
2
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