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Siemens Group |
Silicon Variable Capacitance Diode
• For UHF and TV/TR tuners
• Large capacitance ratio, low series resistance
BB 535
Type
BB 535
Marking Ordering Code Pin Configuration
white S Q62702-B580 1 = C 2 = A
Package
SOD-323
Maximum Ratings
Parameter
Diode reverse voltage
Peak reverse voltage (R ≥ 5kΩ)
Forward current
Operating temperature range
Storage temperature
Thermal Resistance
Junction - ambient
Symbol
VR
VRM
IF
Top
Tstg
RthJA
Values
30
35
20
- 55 ... + 125
- 55 ... + 150
Unit
V
mA
°C
≤ 450
K/W
Semiconductor Group
1
Jan-08-1997
BB 535
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
max.
DC characteristics
Reverse current
VR = 30 V, TA = 25 °C
VR = 30 V, TA = 85 °C
AC characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 2 V, f = 1 MHz
VR = 25 V, f = 1 MHz
VR = 28 V, f = 1 MHz
Capacitance ratio
VR = 2 V, VR = 25 V, f = 1 MHz
Capacitance ratio
VR = 1 V, VR = 28 V, f = 1 MHz
Capacitance matching
VR = 1 ... 28 V, f = 1 MHz
Series resistance
VR = 3 V, f = 470 MHz
Series inductance
IR
-
-
-
-
10
200
CT
17.5
14.01
2.05
1.9
CT2/CT25
6
CT1/CT28
8.2
∆CT/CT
-
rs
-
Ls -
18.7
15
2.24
2.1
6.7
8.9
-
0.55
2
20
16.1
2.4
2.3
7.5
9.8
2.5
0.65
-
Unit
nA
pF
-
%
Ω
nH
Semiconductor Group
2
Jan-08-1997
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