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Philipss |
DISCRETE SEMICONDUCTORS
DATA SHEET
alfpage
M3D050
BB417
UHF variable capacitance diode
Product specification
Supersedes data of April 1992
File under Discrete Semiconductors, SC01
1996 May 03
Philips Semiconductors
UHF variable capacitance diode
Product specification
BB417
FEATURES
• Excellent linearity
• Hermetically sealed leaded glass
SOD68 (DO-34) package
• C15: 3 pF; ratio: 3.5.
handbook, halfpagke
a
Cathode side indicated by a white band on a black body.
MAM159
APPLICATIONS
• Automatic frequency control
• VCO.
DESCRIPTION
The BB417 is a variable capacitance
diode, fabricated in planar
technology, and encapsulated in the
hermetically sealed leaded glass
SOD68 (DO-34) package.
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VR continuous reverse voltage
IF continuous forward current
Tstg storage temperature
Tj operating junction temperature
MIN.
−
−
−55
−55
MAX.
30
20
+150
+100
UNIT
V
mA
°C
°C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
IR reverse current
rs diode series resistance
Cd diode capacitance
C--C---d-d---(-(-1-4-5--V-V--)-)-
capacitance ratio
CONDITIONS
VR = 28 V; see Fig.3
VR = 28 V; Tj = 85 °C; see Fig.3
f = 470 MHz; note 1
VR = 4 V; f = 1 MHz; see Figs 2 and 4
VR = 15 V; f = 1 MHz; see Figs 2 and 4
f = 1 MHz
Note
1. VR is the value at which Cd = 9 pF.
MIN. TYP. MAX. UNIT
− − 10 nA
− − 200 nA
− − 0.75 Ω
8 − 11 pF
2.2 − 4 pF
2−5
1996 May 03
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