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Philipss |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BB200
Low-voltage variable capacitance
double diode
Product specification
2001 Oct 12
Philips Semiconductors
Low-voltage variable capacitance double diode
Product specification
BB200
FEATURES
• Very steep C/V curve
• C1: 70 pF; C4.5: 13.4 pF
• C1 to C5 ratio: min. 5
• Low series resistance
• Small plastic SMD package.
PINNING
PIN
1
2
3
DESCRIPTION
anode (a1)
anode (a2)
common cathode
APPLICATIONS
• Electronic tuning in FM-radio
• Voltage Controlled Oscillators (VCO).
handbook, halfpage
3
3
DESCRIPTION
The BB200 is a variable capacitance double diode with a
common cathode, fabricated in silicon planar technology
and encapsulated in the SOT23 small plastic SMD
package.
12
12
MAM169
MARKING
TYPE NUMBER
BB200
MARKING CODE
SBp
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
Per diode
VR continuous reverse voltage
IF continuous forward current
Tstg storage temperature range
Tj operating junction temperature
MIN.
MAX.
UNIT
− 18 V
− 50 mA
−55
+150
°C
−55 +85 °C
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
Per diode
IR
rs
Cd
reverse current
diode series resistance
diode capacitance
CC-----dd---((--15---VV---))
capacitance ratio
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VR = 10 V
f = 100 MHz; VR = 1.5 V
VR = 1 V; f = 1 MHz
VR = 4.5 V; f = 1 MHz
f = 1 MHz
−
−
65.8
12
5
−
0.43
70
13.4
−
50
0.6
74.2
14.8
−
nA
Ω
pF
pF
2001 Oct 12
2
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