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Philipss |
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D319
BB143
Low-voltage variable
capacitance diode
Preliminary specification
1999 May 12
Philips Semiconductors
Low-voltage variable capacitance diode
Preliminary specification
BB143
FEATURES
• Excellent linearity
• Ultra small plastic SMD package
• C4: 2.25 pF; ratio: 2.35
• Low series resistance.
PINNING
PIN
1
2
cathode
anode
DESCRIPTION
APPLICATIONS
• Voltage controlled oscillators (VCO).
DESCRIPTION
The BB143 is a variable capacitance diode, fabricated in
planar technology, and encapsulated in the
SOD523 (SC-79) ultra small plastic SMD package.
handbook, halfpage 1
2
Marking code: L.
Orientation of marking code as shown.
Cathode side indicated by a bar.
MBL026
Fig.1 Simplified outline (SOD523; SC-79)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VR continuous reverse voltage
VRM peak reverse voltage
in series with a 10 kΩ resistor
IF continuous forward current
Tstg storage temperature
Tj operating junction temperature
MIN.
−
−
−
−55
−55
MAX.
6
8
20
+150
+150
UNIT
V
V
mA
°C
°C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
IR reverse current
rs diode series resistance
Cd diode capacitance
CC-----dd----((--14--VV----))
capacitance ratio
CONDITIONS
VR = 6 V; see Fig.3
VR = 6 V; Tj = 85 °C; see Fig.3
f = 470 MHz; VR = 1 V
VR = 1 V; f = 1 MHz;
see Figs 2 and 4
VR = 4 V; f = 1 MHz;
see Figs 2 and 4
f = 1 MHz
MIN.
−
−
−
4.75
TYP.
−
−
0.5
5.3
MAX.
10
200
−
5.75
UNIT
nA
nA
Ω
pF
2.05 2.25 2.55 pF
2.1 2.35 −
1999 May 12
2
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