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Philipss |
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D176
BAX12
Controlled avalanche diode
Product specification
Supersedes data of April 1996
1996 Sep 17
Philips Semiconductors
Controlled avalanche diode
Product specification
BAX12
FEATURES
• Hermetically sealed leaded glass
SOD27 (DO-35) package
• Switching speed: max. 50 ns
• General application
• Continuous reverse voltage:
max. 90 V
• Repetitive peak reverse voltage:
max. 90 V
• Repetitive peak forward current:
max. 800 mA
• Repetitive peak reverse current:
max. 600 mA
• Capable of absorbing transients
repetitively.
APPLICATIONS
• Switching of inductive loads in
semi-electronic telephone
exchanges.
DESCRIPTION
The BAX12 is a controlled avalanche diode fabricated in planar technology, and
encapsulated in the hermetically sealed leaded glass SOD27 (DO-35)
package.
handbook, halfpagke
a
MAM246
Marking code: BAX12.
Fig.1 Simplified outline (SOD27; DO35) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VRRM
VR
IF
IFRM
IFSM
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
Ptot
IRRM
ERRM
Tstg
Tj
total power dissipation
repetitive peak reverse current
repetitive peak reverse energy
storage temperature
junction temperature
CONDITIONS
note 1
note 1
see Fig.2; note 2
square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs
t = 100 µs
t = 10 ms
Tamb = 25 °C; note 2
tp ≥ 50 µs; f ≤ 20 Hz; Tj = 25 °C
MIN.
−
−
−
−
MAX.
90
90
400
800
UNIT
V
V
mA
mA
− 55 A
− 15 A
− 9A
− 450 mW
− 600 mA
− 5.0 mJ
−65 +200 °C
− 200 °C
Notes
1. It is allowed to exceed this value; see Figs 8 and 9. Care should be taken not to exceed the IRRM rating.
2. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
1996 Sep 17
2
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