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Infineon Technologies AG |
Silicon Switching Diodes
Switching applications
High breakdown voltage
BAW78.../BAW79...
BAW78D
2
BAW79D
2
1 23
1 23
Type
BAW78D
BAW79D
Package
SOT89
SOT89
Configuration
single
common cathode
Marking
GD
GH
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Peak reverse voltage
Forward current
Peak forward current
Surge forward current, t = 1 µs
Total power dissipation
BAW78D, TS ≤ 125°C
BAW79D, TS ≤ 115°C
VR
VRM
IF
IFM
IFS
Ptot
Junction temperature
Storage temperature
Tj
Tstg
Value
400
400
1
1
10
1
1
150
-65 ... 150
Unit
V
A
W
°C
Thermal Resistance
Parameter
Junction - soldering point1)
BAW78D
BAW79D
Symbol
RthJS
Value
≤ 25
≤ 35
Unit
K/W
1 Feb-03-2003
BAW78.../BAW79...
1For calculation of RthJA please refer to Application Note Thermal Resistance
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ.
DC Characteristics
Breakdown voltage
V(BR)
400 -
I(BR) = 100 µA
Reverse current
IR - -
VR = 400 V
--
VR = 400 V, TA = 150 °C
Forward voltage
IF = 1 A
IF = 2 A
VF
--
--
AC Characteristics
Diode capacitance
VR = 0 V, f = 1 MHz
CT - 10
Reverse recovery time
trr
IF = 200mA, IR = 200mA, measured at IR = 20mA
RL = 100
-1
,
max.
-
1
50
1.6
2
-
-
Unit
V
µA
V
pF
µs
Test circuit for reverse recovery time
D.U.T.
ΙF
Oscillograph
EHN00019
Puls generator: tp = 10µs, D = 0.05,
tr = 0.6ns, Ri = 50
Oscillograp: R = 50 , tr = 0.35ns
C 1pF
2 Feb-03-2003
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