BAW78M 반도체 회로 부품 판매점
Silicon Switching Diode
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 Infineon Technologies AG |
Silicon Switching Diode
Switching applications
High breakdown voltage
BAW78M
4
5
3
2
1
VPW05980
Type
BAW78M
Marking
GDs
Pin Configuration
Package
1 = A 2 = C 3 n.c. 4 n.c. 5 = C SCT595
Maximum Ratings
Parameter
Symbol
Values
Diode reverse voltage
Peak reverse voltage
Forward current
Peak forward current
Surge forward current, t = 1 s
Total power dissipation, TS 110 °C
Junction temperature
Storage temperature
VR
VRM
IF
IFM
IFS
Ptot
Tj
Tstg
400
400
1
1
10
1
150
-65 ... 150
Thermal Resistance
Junction - soldering point1)
RthJS
40
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
A
W
°C
K/W
1 Aug-21-2001
BAW78M
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Breakdown voltage
I(BR) = 100 µA
Forward voltage
IF = 1 A
IF = 2 A
Reverse current
VR = 400 V
V(BR)
VF
IR
400 -
-V
- - 1.6
- -2
- - 1 µA
Reverse current
VR = 400 V, TA = 150 °C
IR - - 50
AC characteristics
Diode capacitance
VR = 0 V, f = 1 MHz
Reverse recovery time
IF = 200 mA, IR = 200 mA, RL = 100 ,
measured at IR = 20mA
CD - 10 - pF
trr - 1 - µs
Test circuit for reverse recovery time
D.U.T.
Oscillograph
ΙF
EHN00019
Pulse generator: tp = 10µs, D = 0.05,
tr = 0.6ns, Ri = 50
Oscillograph: R = 50, tr = 0.35ns,
C 1pF
2 Aug-21-2001
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제조업체: Infineon Technologies AG
( infineon )
BAW78M diode
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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전력반도체 문의 : 010-3582-2743
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