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Silicon Switching Diodes (For high-speed switching High breakdown voltage Common cathode)



Siemens Group 로고
Siemens Group
BAW78A-BAW79D 데이터시트, 핀배열, 회로
Silicon Switching Diodes
q For high-speed switching
q High breakdown voltage
q Common cathode
BAW 79 A
… BAW 79 D
Type
BAW 79 A
BAW 79 B
BAW 79 C
BAW 79 D
Marking
GE
GF
GG
GH
Ordering Code
(tape and reel)
Q62702-A781
Q62702-A782
Q62702-A771
Q62702-A733
Pin Configuration
Package1)
SOT-89
Maximum Ratings per Diode
Parameter
Symbol
BAW
Reverse voltage
VR 50
Peak reverse voltage
VRM 50
Forward current
IF
Peak forward current
IFM
Surge forward current
t = 1 µs
IFS
Total power dissipation
TS = 115 ˚C
Ptot
Junction temperature
Tj
Storage temperature range Tstg
Thermal Resistance
Junction - ambient2)
Junction - soldering point
Rth JA
Rth JS
Values
BAW
BAW
100 200
100 200
1
1
10
1
150
– 65 … + 150
BAW
400
400
175
35
Unit
V
A
W
˚C
K/W
1) For detailed information see chapter Package Outlines.
2) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91


BAW78A-BAW79D 데이터시트, 핀배열, 회로
BAW 79 A
… BAW 79 D
Electrical Characteristics per Diode
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC characteristics
Breakdown voltage
I(BR) = 100 µA
Forward voltage1)
IF = 1 A
IF = 2 A
Reverse current
VR = VRmax
VR = VRmax, TA = 150 ˚C
AC characteristics
Diode capacitance
VR = 0 V, f = 1 MHz
Reverse recovery time
IF = 200 mA, IR = 200 mA,
RL = 100
measured at IR = 20 mA
BAW 79 A
BAW 79 B
BAW 79 C
BAW 79 D
Test circuit for reverse recovery time
Symbol
Values
Unit
min. typ. max.
V(BR)
50 –
100 –
200 –
400 –
VF
––
––
IR
––
––
V
V
1.6
2
µA
1
50
CD – 10 – pF
trr – 1 – µs
Pulse generator: tp = 5 µs, D = 0.05
tr = 0.6 ns, Rj = 50
Oscillograph: R = 50
tr = 0.35 ns
C 1 pF
1) Pulse test: tp 300 µs, D = 2 %.
Semiconductor Group
2




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( siemens )

BAW78A-BAW79D diode

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BAW78A-BAW79D

Silicon Switching Diodes (For high-speed switching High breakdown voltage Common cathode) - Siemens Group