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Philipss |
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D173
BAW56T
High-speed double diode
Product specification
File under Discrete Semiconductors, SC01
1997 Dec 19
Philips Semiconductors
High-speed double diode
Product specification
BAW56T
FEATURES
• Very small plastic SMD package
• High switching speed: max. 4 ns
• Continuous reverse voltage:
max. 75 V
• Repetitive peak reverse voltage:
max. 85 V
• Repetitive peak forward current:
max. 500 mA.
APPLICATIONS
• High-speed switching in e.g.
surface mounted circuits.
DESCRIPTION
Two high-speed switching diodes in a
common anode configuration,
fabricated in planar technology, in a
very small rectangular SMD SOT416
(SC-75) package.
PINNING
PIN
1
2
3
DESCRIPTION
cathode 1
cathode 2
common anode
handbook, halfpage
3
3
1
1 2 MAM369
2
Marking code: A1.
Fig.1 Simplified outline (SOT416; SC-75) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
Per diode (unless otherwise specified)
VRRM
VR
IF
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
IFRM repetitive peak forward current
IFSM non-repetitive peak forward current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Ts = 90 °C; see Fig.2
single diode loaded
both diodes loaded
square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs
t = 1 ms
t=1s
Ts = 90 °C; one diode loaded
MIN. MAX. UNIT
− 85 V
− 75 V
− 150 mA
− 75 mA
− 500 mA
−4A
−1A
− 0.5 A
− 170 mW
−65 +150 °C
− +150 °C
1997 Dec 19
2
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