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BAW56S 반도체 회로 부품 판매점

High-speed double diode array



Philipss 로고
Philipss
BAW56S 데이터시트, 핀배열, 회로
DISCRETE SEMICONDUCTORS
DATA SHEET
MBD128
BAW56S
High-speed double diode array
Product specification
Supersedes data of 1997 Aug 27
File under Discrete Semiconductors, SC01
1997 Oct 21


BAW56S 데이터시트, 핀배열, 회로
Philips Semiconductors
High-speed double diode array
Product specification
BAW56S
FEATURES
Small plastic SMD package
High switching speed: max. 4 ns
Continuous reverse voltage:
max. 75 V
Repetitive peak reverse voltage:
max. 85 V
Repetitive peak forward current:
max. 450 mA.
PINNING
PIN
1
2
3
4
5
6
cathode (k1)
cathode (k2)
common anode (a1)
cathode (k3)
cathode (k4)
common anode (a2)
DESCRIPTION
APPLICATIONS
General purpose switching in e.g.
surface mounted circuits.
6 54
handbook, halfpage
654
DESCRIPTION
The BAW56S consists of two dual
high-speed switching diodes with
common anodes, fabricated in planar
technology, and encapsulated in the
small SMD SOT363 plastic package.
12
Top view
3
MSA370
1 2 3 MGL159
Marking code: A1t.
Fig.1 Simplified outline (SOT363) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
Per diode
VRRM
VR
IF
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
IFRM repetitive peak forward current
IFSM non-repetitive peak forward current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
single diode loaded; see Fig.2
all diodes loaded; see Fig.2
square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs
t = 1 ms
t=1s
Ts = 60 °C; note 1
Note
1. One or more diodes loaded.
MIN. MAX. UNIT
85 V
75 V
250 mA
100 mA
450 mA
4A
1A
0.5 A
350 mW
65 +150 °C
65 +150 °C
1997 Oct 21
2




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