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Philipss |
DISCRETE SEMICONDUCTORS
DATA SHEET
MBD128
BAW56S
High-speed double diode array
Product specification
Supersedes data of 1997 Aug 27
File under Discrete Semiconductors, SC01
1997 Oct 21
Philips Semiconductors
High-speed double diode array
Product specification
BAW56S
FEATURES
• Small plastic SMD package
• High switching speed: max. 4 ns
• Continuous reverse voltage:
max. 75 V
• Repetitive peak reverse voltage:
max. 85 V
• Repetitive peak forward current:
max. 450 mA.
PINNING
PIN
1
2
3
4
5
6
cathode (k1)
cathode (k2)
common anode (a1)
cathode (k3)
cathode (k4)
common anode (a2)
DESCRIPTION
APPLICATIONS
• General purpose switching in e.g.
surface mounted circuits.
6 54
handbook, halfpage
654
DESCRIPTION
The BAW56S consists of two dual
high-speed switching diodes with
common anodes, fabricated in planar
technology, and encapsulated in the
small SMD SOT363 plastic package.
12
Top view
3
MSA370
1 2 3 MGL159
Marking code: A1t.
Fig.1 Simplified outline (SOT363) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
Per diode
VRRM
VR
IF
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
IFRM repetitive peak forward current
IFSM non-repetitive peak forward current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
single diode loaded; see Fig.2
all diodes loaded; see Fig.2
square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs
t = 1 ms
t=1s
Ts = 60 °C; note 1
Note
1. One or more diodes loaded.
MIN. MAX. UNIT
− 85 V
− 75 V
− 250 mA
− 100 mA
− 450 mA
−4A
−1A
− 0.5 A
− 350 mW
−65 +150 °C
−65 +150 °C
1997 Oct 21
2
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