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BAW56DW 반도체 회로 부품 판매점

QUAD SURFACE MOUNT SWITCHING DIODE ARRAY



Diodes Incorporated 로고
Diodes Incorporated
BAW56DW 데이터시트, 핀배열, 회로
Features
Fast Switching Speed
Ultra-Small Surface Mount Package
For General Purpose Switching Applications
High Conductance
Two “BAW56” Circuits In One Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3) 
Qualified to AEC-Q101 Standard for High Reliability
BAW56DW
SURFACE MOUNT SWITCHING DIODE ARRAY
Mechanical Data
Case: SOT363
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Solderable per MIL-STD-202, Method 208 e3
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Polarity: See Diagram
Weight: 0.006 grams (approximate)
SOT363
A1 C2 C2
Top View
C1 C1 A2
Top View
Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number
BAW56DW-7-F
BAW56DWQ-7-F
Case
SOT363
SOT363
Packaging
3000/Tape & Reel
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
KJC YM
KJC = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Year
2002 2003 … 2008 2009
Code
N P…VW
Month
Code
Jan Feb Mar Apr
1234
2010
X
May
5
2011
Y
Jun
6
2012
Z
Jul
7
2013
A
2014
B
2015
C
2016
D
2017
E
Aug Sep Oct Nov
8 9ON
2018
F
Dec
D
BAW56DW
Document number: DS30146 Rev. 11 - 2
1 of 4
www.diodes.com
May 2013
© Diodes Incorporated


BAW56DW 데이터시트, 핀배열, 회로
BAW56DW
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current
(Note 5)
(Note 5)
@ t = 1.0µs
@ t = 1.0s
Symbol
VRM
VRRM
VRWM
VR
VR(RMS)
IFM
IO
IFSM
Value
100
75
53
300
150
2.0
1.0
Unit
V
V
V
mA
mA
A
Thermal Characteristics
Characteristic
Power Dissipation
Thermal Resistance Junction to Ambient Air
Operating and Storage Temperature Range
(Note 5)
(Note 5)
Symbol
PD
RθJA
TJ , TSTG
Value
200
625
-65 to +150
Unit
mW
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Reverse Breakdown Voltage
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
Symbol
(Note 6) V(BR)R
VF
Min
75
(Note 6)
IR
CT
trr
Max
0.715
0.855
1.0
1.25
2.5
50
30
25
2.0
4.0
Unit
V
V
µA
µA
µA
nA
pF
ns
Test Condition
IR = 2.5µA
IF = 1.0mA
IF = 10mA
IF = 50mA
IF = 150mA
VR = 75V
VR = 75V, TJ = +150°C
VR = 25V, TJ = +150°C
VR = 20V
VR = 0, f = 1.0MHz
IF = IR = 10mA,
Irr = 0.1 x IR, RL = 100
Notes:
5. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
6. Short duration pulse test used to minimize self-heating effect.
BAW56DW
Document number: DS30146 Rev. 11 - 2
2 of 4
www.diodes.com
May 2013
© Diodes Incorporated




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BAW56DW diode

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