파트넘버.co.kr BAW56 데이터시트 PDF


BAW56 반도체 회로 부품 판매점

Surface Mount Switching Diode



Comchip Technology 로고
Comchip Technology
BAW56 데이터시트, 핀배열, 회로
Surface Mount Switching Diode
BAV99 Thru BAW56 Voltage: 70 Volts
Current: 215mA
Features
Fast Switching Speed
Surface Mount Package Ideally Suited
for Automatic Insertio
COMCHIP
www.comchip.com.tw
For General Purpose Switching Applications
High Conductance
Mechanical data
Case: SOT -23, Plastic
Approx. Weight: 0.008 gram
This diodes is also available in other
configurations including a dual common
cathode with type designation BAV70, a dual
common anodes with type designation
BAW56 and single chip inside with type
Designation BAL99
.119 (3.0)
.110 (2.8)
.020 (0.5)
3
SOT-23
Top View
12
BAV99
ANODE
CATHODE
1
3
ANODE
2
CATHODE
3
ANODE
BAL99
1
2
CATHODE
.037(0.95) .037(0.95)
CATHODE
3
CATHODE
ANODE
1
2
ANODE
BAV70
ANODE
3
ANODE
CATHODE
1
2
CATHODE
BAW56
.020 (0.5) .020 (0.5)
.103 (2.6)
.086 (2.2)
Dimensions in inches (millimeters)
Maximum Ratings
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
Rating
Symbol
VR
IF
IFM(surge)
Value
70
215
500
Units
VDC
mAdc
mAdc
Thermal Characteristics
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
RșJA
PD
RșJA
TJ, Tstg
Max
225
1.8
556
300
2.4
417
–55 to +150
Units
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Electrical Characterics (TA = 25°C unless otherwise noted)
Characteristic (OFF CHARACTERISTICS)
Reverse Breakdown Voltage ( I(BR) = 100 uAdc )
Reverse Voltage Leakage Current
VR = 25 Vdc, TJ = 150°C
VR = 70 Vdc
VR = 70 Vdc, TJ = 150°C
Diode Capacitance (VR = 0, f = 1.0 MHz))
Forward Voltage
I F = 1.0 mAdc
I F = 10 mAdc
I F = 50 mAdc
I F = 150 mAdc
Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0mAdc) RL = 100ȍ
1.FR–5 = 1.0 X 0.75X 0.062 in. 2.Aluminum = 0.4X 0.3X 0.024 in. 99.5% aluminum.
Symbol
V(BR)
IR
CD
VF
Trr
Min
70
-
-
-
-
-
-
-
Max
-
30
2.5
50
1.5
715
855
1000
1250
6.0
Units
Vdc
uAdc
pF
mV
nS
MDS0210001A
Page 1


BAW56 데이터시트, 핀배열, 회로
Surface Mount Switching Diode
COMCHIP
www.comchip.com.tw
RATING AND CHARACTERISTIC CURVES (BAV99 Thru BAW56)
+10 V
820
2.0 k
100 µH
0.1 µF
IF
0.1 µF
tr tp
10%
t
IF
trr
t
50 Output
Pulse
Generator
DUT 90%
50 Input
Sampling
Oscilloscopes
VR
Input Signal
IR(REC) = 1.0 mA
IR
Output Pulse
(IF = IR = 10 mA; Measured
at IR(REC) = 1.0 mA)
100
10
1.0
0.1
0.2
Notes: 1. A 2.0 kvariable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
TA = 85°C
10
TA = 150°C
1.0 TA = 125°C
TA = – 40°C
TA = 25°C
0.1
0.01
TA = 85°C
TA = 55°C
0.001
0.4 0.6 0.8 1.0 1.2
0
VF, Forward Voltage (V)
Figure 2. Forward Voltage
TA = 25°C
10 20 30 40
VR, Reverse Voltage (V)
Figure 3. Leakage Current
50
0.68
0.64
0.60
0.56
0.52
0
2 46
VR, Reverse Voltage (V)
Figure 4. Capacitance
8
MDS0210001A
Page 2




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BAW56 diode

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