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Philipss |
DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D088
BAW156
Low-leakage double diode
Product specification
Supersedes data of 1996 Mar 13
1999 May 11
Philips Semiconductors
Low-leakage double diode
Product specification
BAW156
FEATURES
• Plastic SMD package
• Low leakage current: typ. 3 pA
• Switching time: typ. 0.8 µs
• Continuous reverse voltage:
max. 75 V
• Repetitive peak reverse voltage:
max. 85 V
• Repetitive peak forward current:
max. 500 mA.
PINNING
PIN
1
2
3
cathode
cathode
common anode
DESCRIPTION
handbook, 4 columns
2
1
APPLICATION
• Low-leakage current applications in
surface mounted circuits.
DESCRIPTION
Epitaxial, medium-speed switching,
double diode in a small SOT23 plastic
SMD package. The diodes are in
common anode configuration.
Top view
3
21
3
MAM206
Marking code: JZp = made in Hong Kong; JZt = made in Malaysia.
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
Per diode
VRRM
VR
IF
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
IFRM repetitive peak forward current
IFSM non-repetitive peak forward
current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
single diode loaded; note 1; see Fig.2
double diode loaded; note 1; see Fig.2
square wave; Tj = 25 °C prior to surge;
see Fig.4
tp = 1 µs
tp = 1 ms
tp = 1 s
Tamb ≤ 25 °C; note 1
−
−
−
−
−
−
−
−
−
−65
−
Note
1. Device mounted on a FR4 printed-circuit board.
MAX. UNIT
85 V
75 V
160 mA
140 mA
500 mA
4
1
0.5
250
+150
150
A
A
A
mW
°C
°C
1999 May 11
2
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