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Infineon Technologies AG |
Silicon Switching Diode
• Electrically insulated high-voltage
medium-speed diodes
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
BAW101...
BAW101
"
,
!
,
Type
Package
Configuration
BAW101
SOT143
parallel
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
VR
Peak reverse voltage
VRM
Forward current
IF
Peak forward current
IFM
Peak forward current
Surge forward current, t = 1 µs
IFM
IFS
Non-repetitive peak surge forward current
IFSM
Total power dissipation
Ptot
TS ≤ 35°C
Junction temperature
Tj
Storage temperature
Tstg
1Pb-containing package may be available upon special request
Marking
JPs
Value
300
300
250
500
500
4.5
-
350
Unit
V
mA
mA
A
mW
150
-65 ... 150
°C
1 2007-04-20
BAW101...
Thermal Resistance
Parameter
Junction - soldering point1)
BAW101
Symbol
RthJS
Value
≤ 330
Unit
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Breakdown voltage
V(BR)
300 -
-
I(BR) = 100 µA
Unit
V
Reverse current
VR = 250 V
VR = 250 V, TA = 150 °C
IR µA
- - 0.15
- - 50
Forward voltage
IF = 100 mA
VF - - 1.3 V
AC Characteristics
Diode capacitance
VR = 0 V, f = 1 MHz
CT - 6 - pF
Reverse recovery time
IF = 10 mA, IR = 10 mA, measured at IR = 1mA,
RL = 100 Ω
trr
- 1 - µs
Test circuit for reverse recovery time
D.U.T.
Oscillograph
ΙF
Pulse generator: tp = 10µs, D = 0.05, tr = 0.6ns,
Ri = 50Ω
Oscillograph: R = 50Ω, tr = 0.35ns, C ≤ 1pF
EHN00019
1For calculation of RthJA please refer to Application Note Thermal Resistance
2 2007-04-20
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